List of bibliographic references
Number of relevant bibliographic references: 176.
[0-50] [
0 - 20][
0 - 50][
50-70]
Ident. | Authors (with country if any) | Title |
---|
000933 (2013) |
| MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers |
001500 (2012) |
| Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers |
001845 (2012) |
| Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates |
002357 (2011) |
| Terahertz time-domain spectroscopy setup based on InAs emitter |
002730 (2011) |
| Polymerization of C60 Fullerene Films Under Doping by Indium Atoms |
002A81 (2011) |
| Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures : High-resolution X-ray Diffraction and Imaging |
002D30 (2011) |
| High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates : High-resolution X-ray Diffraction and Imaging |
002F16 (2011) |
| Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide |
003129 (2011) |
| Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates |
003541 (2011) |
| 3,6-Di(9-carbazolyl)-9-(2-ethylhexyl)carbazole based single-layer blue organic light emitting diodes |
003546 (2011) |
| 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber |
003582 (2010) |
| Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode |
003855 (2010) |
| Structural stability of In2O3 films as sensor materials |
003952 (2010) |
| Semiconductor Nanostructures Modified by the UV Laser Radiation |
003A48 (2010) |
| Properties of zinc-oxide nanoparticles synthesized by electrical-discharge technique in liquids |
004635 (2010) |
| Calculation of gain and luminescence spectra of quantum-cascade laser structures taking into account asymmetric emission line broadening |
004D87 (2009) |
| Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation |
005739 (2009) |
| Design of Complex Semiconductor Integrated Structures |
005740 (2009) |
| Design considerations for guardring-free planar InGaAs/InP avalanche photodiode |
005826 (2009) |
| Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures |
005C64 (2008) |
| THz emission from semiconductor surfaces : Recent developments in terahertz optoelectronics |
005F62 (2008) |
| Production of broadband modal gain spectra in asymmetric multiple quantum-well Ga0.47In0.53As/Ga0.18In0.82As0.4P0.6 heterostructures |
006328 (2008) |
| M-plane GaN/InGaN/AlInN on LiAIO2 grown by MOVPE |
006660 (2008) |
| Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates |
006761 (2008) |
| Exciton radiative lifetime of quantum rods in reflectivity |
006C04 (2008) |
| Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure |
007186 (2007) |
| Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites |
007594 (2007) |
| Magnetic field effect on terahertz emission from inas surface excited by femtosecond laser pulses |
007C74 (2007) |
| Deposition by magnetron sputtering and characterization of indium tin oxide thin films |
007F41 (2007) |
| Advances in femtosecond lasers having enhanced efficiencies |
008214 (2006) |
| Terahertz emission from semiconductor surfaces illuminated by femtosecond laser pulses |
008424 (2006) |
| Simulation of p-type diffusion in compound semiconductor : the case of beryllium implanted in InGaAs |
008886 (2006) |
| Low temperature air-annealing of Cu(InGa)Se2 single crystals |
008B54 (2006) |
| Growth and properties of single crystals of the ternary CuIn5Se8 compound |
008C43 (2006) |
| Excitons in high-quality CuInS2 single crystals |
008F59 (2006) |
| Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature |
009192 (2006) |
| 1.54 μm photoluminescence from Er-doped sol-gel derived In2O3 films embedded in porous anodic alumina |
009680 (2005) |
| Preparation of Cu(In,Ga)Se2 thin film solar cells by two-stage selenization processes using N2 gas |
009801 (2005) |
| Optoelectronic applications of porous anodic alumina |
009828 (2005) |
| Optical and structural properties of sol-gel derived materials embedded in porous anodic alumina |
009A64 (2005) |
| Investigation of CuInZnSe2 thin films for solar cell applications |
009D65 (2005) |
| Fast-operating focal plane array of a 128x128 elements format on the basis of insb with the frame-accurate accumulation and function of a range finder |
00AF39 (2004) |
| Photoelectrochemical formation of indium and cadmium selenide nanoparticles through Se electrode precursor |
00B338 (2004) |
| Influence of growth conditions on the structural quality of Cu(InGa)Se2 and CuInSe2 thin films |
00B422 (2004) |
| In situ resistivity measurements of Cu-In thin films during their selenization |
00B423 (2004) |
| In situ resistivity measurements during selenization process |
00B958 (2004) |
| Crystal structure determination of In3(H3O)(H2PO4)6(HPOP4)2 . 4H2O from X-ray powder diffraction |
00CB21 (2003) |
| Structural and physical-chemical properties of the CuGa5Se8, CuGa3Se5 and CuIn3Se5 compounds |
00CC93 (2003) |
| Raman spectroscopy of CuInSe2 thin films prepared by selenization |
00CD69 (2003) |
| Polycrystalline well-shaped blocks of indium oxide obtained by the sol-gel method and their gas-sensing properties |
00CE77 (2003) |
| Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions |
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