Kentucky < Languedoc-Roussillon < Latium

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 459.
[50-70] [0 - 20][0 - 50][70-90]

Ident.	Authors (with country if any)	Title
005645 (2009)		Effect of pressure on electrical properties of short period InAs/GaSb superlattice
005936 (2009)		Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers
005971 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature
005994 (2009)		A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
005A71 (2008)		nBn Based Infrared Detectors Using Type-II InAs/(In,Ga)Sb Superlattices
005B81 (2008)		Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes : A new approach
005C41 (2008)		Terahertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels : Heterostructure Terahertz Devices
006188 (2008)		Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
006507 (2008)		InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations
006509 (2008)		InAs-based quantum cascade lasers
006804 (2008)		Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
006B05 (2008)		Compact Optical Modulator based on Carrier Induced Gain of an InP/InGaAsP Micro-disk Cavity Integrated on SOI
007429 (2007)		Numerical simulation of CuInxGa1-xSe2 solar cells by AMPS-1D
007481 (2007)		Nanozeolite-assembled interface towards sensitive biosensing
007487 (2007)		Nanometer transistors for emission and detection of THz radiation
007694 (2007)		Interface analysis of InAs/GaSb superlattice grown by MBE
007858 (2007)		High-density InSb-based quantum dots emitting in the mid-infrared
007932 (2007)		Giant intersubband polariton splitting in InAs/AlSb microcavities
007962 (2007)		First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
007E28 (2007)		Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
007F17 (2007)		An indium phosphide-based Near infrared MOEMS Microspectrometer for agri-food and environmental monitoring

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