Oblys d'Almaty < Ohio < Oklahoma

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 246.
[40-60] [0 - 20][0 - 50][60-80]

Ident.	Authors (with country if any)	Title
00B392 (2004)		InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications
00B668 (2004)		Fabrication of indium bumps for hybrid infrared focal plane array applications
00B694 (2004)		Exploring optimum growth for high quality InAs/GaSb type-II superlattices
00BF36 (2003-10-01)		High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
00C157 (2003-07-21)		Erratum: High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy [Appl. Phys. Lett. 82, 3212 (2003)]
00C397 (2003-05-12)		High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy
00C430 (2003-05)		Photosensitive Structures Based on CdGa2Se4 Single Crystals
00C521 (2003-04)		In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy
00C547 (2003-03-17)		Surface charge accumulation of InN films grown by molecular-beam epitaxy
00C599 (2003-03-01)		Elastic and piezoelectric fields in a substrate AlN due to a buried quantum dot
00C677 (2003-02)		Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals
00C686 (2003-01-27)		Three-color integration on rare-earth-doped GaN electroluminescent thin films
00D085 (2003)		Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy
00D156 (2003)		Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD
00D188 (2003)		Instabilities in GaN based FET devices: Nature and alternative structures
00DC01 (2002-12-15)		Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding
00DC81 (2002-11-15)		Magneto-optical properties of charged excitons in quantum dots
00DD06 (2002-11-04)		Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
00DD28 (2002-11)		Near-surface electronic defects and morphology of CuIn1-xGaxSe2
00E066 (2002-07-01)		Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy
00E102 (2002-06-24)		Deep-level defects in InGaAsN grown by molecular-beam epitaxy

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/AffRegion.i -k "Ohio" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/AffRegion.i  \
                -Sk "Ohio" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Main/Repository/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    indexItem
   |index=    AffRegion.i
   |clé=    Ohio
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024