Aragon (communauté autonome) < Arizona < Arkansas

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 104.
[40-60] [0 - 20][0 - 50][60-80]

Ident.	Authors (with country if any)	Title
00FF84 (2001-07-02)		Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well
010022 (2001-07)		GaAs-substrate-based long-wave active materials with type-II band alignments
010044 (2001-06-18)		Large-signal coherent control of normal modes in quantum-well semiconductor microcavity
010185 (2001-05-14)		Picosecond Raman scattering studies of nonequilibrium electron distributions and energy-loss rate in InxGa1-xAs1-yNy
010231 (2001-04-30)		Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
011955 (2000-12-25)		Optically pumped InGaN/GaN lasers with wet-etched facets
011962 (2000-12-18)		Quantum Correlations in the Nonperturbative Regime of Semiconductor Microcavities
011995 (2000-12-15)		Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy
011C52 (2000-09-15)		Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors
011C80 (2000-09-01)		Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100-1550 nm range
011D26 (2000-08-15)		Signatures of correlations in intensity-dependent excitonic absorption changes
011D71 (2000-07-31)		Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers
011F93 (2000-05-22)		Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography
012011 (2000-05-15)		Exciton-polariton eigenmodes in light-coupled In0.04Ga0.96As/GaAs semiconductor multiple-quantum-well periodic structures
012072 (2000-05)		Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry
012088 (2000-05)		Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs
012196 (2000-04-10)		Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
012288 (2000-03-13)		High-power wavelength-tunable circular-grating surface-emitting distributed Bragg deflector lasers
012299 (2000-03-01)		Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001)
012300 (2000-03-01)		Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires
013849 (1999-12-20)		Quantum Correlations and Intraband Coherences in Semiconductor Cavity QED

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