Near-surface InAs/GaAs quantum dots with sharp electronic shells
Identifieur interne : 012036 ( Main/Repository ); précédent : 012035; suivant : 012037Near-surface InAs/GaAs quantum dots with sharp electronic shells
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Abstract
The interaction between zero-dimensional states and surface states is studied using near-surface quantum dot (QD) ensembles with well-defined electronic shells. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ∼30 to more than ∼46meV as the distance of the QDs from the surface is changed from 100 to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ∼3 orders of magnitude, and a red-shift of ∼65meV are observed. For QDs capped with less than ∼10nm, remarkable charge transfers between the QD and surface states lead to optical memory effects lasting over time-scales of several minutes.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Near-surface InAs/GaAs quantum dots with sharp electronic shells</title><author><name sortKey="Fafard, S" uniqKey="Fafard S">S. Fafard</name><affiliation><inist:fA14 i1="01"><s1>Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, K1A 0R6</s1><sZ>1 aut.</sZ></inist:fA14></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0180274</idno><date when="2000-05-08">2000-05-08</date><idno type="stanalyst">PASCAL 00-0180274 AIP</idno><idno type="RBID">Pascal:00-0180274</idno><idno type="wicri:Area/Main/Corpus">013631</idno><idno type="wicri:Area/Main/Repository">012036</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge transfer states</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line intensity</term><term>Red shift</term><term>Semiconductor quantum dots</term><term>Surface states</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7866F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Etat surface</term><term>Etat transfert charge</term><term>Déplacement vers le rouge</term><term>Intensité raie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The interaction between zero-dimensional states and surface states is studied using near-surface quantum dot (QD) ensembles with well-defined electronic shells. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ∼30 to more than ∼46meV as the distance of the QDs from the surface is changed from 100 to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ∼3 orders of magnitude, and a red-shift of ∼65meV are observed. For QDs capped with less than ∼10nm, remarkable charge transfers between the QD and surface states lead to optical memory effects lasting over time-scales of several minutes.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Near-surface InAs/GaAs quantum dots with sharp electronic shells</s1></fA08><fA11 i1="01" i2="1"><s1>FAFARD (S.)</s1></fA11><fA14 i1="01"><s1>Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, K1A 0R6</s1><sZ>1 aut.</sZ></fA14><fA20><s1>2707-2709</s1></fA20><fA21><s1>2000-05-08</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0180274</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The interaction between zero-dimensional states and surface states is studied using near-surface quantum dot (QD) ensembles with well-defined electronic shells. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ∼30 to more than ∼46meV as the distance of the QDs from the surface is changed from 100 to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ∼3 orders of magnitude, and a red-shift of ∼65meV are observed. 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