Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design
Identifieur interne : 012035 ( Main/Repository ); précédent : 012034; suivant : 012036Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design
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Abstract
The refractive indices of In1-xGaxAsyP1-y grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design</title><author><name sortKey="Wallace, S G" uniqKey="Wallace S">S. G. Wallace</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7</wicri:regionArea><wicri:noRegion>Ontario L8S 4L7</wicri:noRegion></affiliation></author><author><name sortKey="Robinson, B J" uniqKey="Robinson B">B. J. Robinson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7</wicri:regionArea><wicri:noRegion>Ontario L8S 4L7</wicri:noRegion></affiliation></author><author><name sortKey="Mascher, P" uniqKey="Mascher P">P. Mascher</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7</wicri:regionArea><wicri:noRegion>Ontario L8S 4L7</wicri:noRegion></affiliation></author><author><name sortKey="Haugen, H K" uniqKey="Haugen H">H. K. Haugen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7</wicri:regionArea><wicri:noRegion>Ontario L8S 4L7</wicri:noRegion></affiliation></author><author><name sortKey="Thompson, D A" uniqKey="Thompson D">D. A. Thompson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7</wicri:regionArea><wicri:noRegion>Ontario L8S 4L7</wicri:noRegion></affiliation></author><author><name sortKey="Dalacu, D" uniqKey="Dalacu D">D. Dalacu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Engineering Physics and Materials Engineering, Ecole Polytechnique Montreal, Montreal, Quebec H3C 3A7, Canada</s1> <sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Materials Engineering, Ecole Polytechnique Montreal, Montreal, Quebec H3C 3A7</wicri:regionArea> <wicri:noRegion>Quebec H3C 3A7</wicri:noRegion></affiliation></author><author><name sortKey="Martinu, L" uniqKey="Martinu L">L. Martinu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Engineering Physics and Materials Engineering, Ecole Polytechnique Montreal, Montreal, Quebec H3C 3A7, Canada</s1> <sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics and Materials Engineering, Ecole Polytechnique Montreal, Montreal, Quebec H3C 3A7</wicri:regionArea> <wicri:noRegion>Quebec H3C 3A7</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0180302</idno><date when="2000-05-08">2000-05-08</date><idno type="stanalyst">PASCAL 00-0180302 AIP</idno><idno type="RBID">Pascal:00-0180302</idno><idno type="wicri:Area/Main/Corpus">013626</idno><idno type="wicri:Area/Main/Repository">012035</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ellipsometry</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Refractive index</term><term>Semiconductor epitaxial layers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7820C</term><term>7855C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Indice réfraction</term><term>Ellipsométrie</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The refractive indices of In<sub>1-x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub> grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design</s1></fA08><fA11 i1="01" i2="1"><s1>WALLACE (S. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>ROBINSON (B. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>MASCHER (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>HAUGEN (H. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>THOMPSON (D. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>DALACU (D.)</s1></fA11><fA11 i1="07" i2="1"><s1>MARTINU (L.)</s1></fA11><fA14 i1="01"><s1>Department of Engineering Physics and Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Engineering Physics and Materials Engineering, Ecole Polytechnique Montreal, Montreal, Quebec H3C 3A7, Canada</s1> <sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>2791-2793</s1></fA20><fA21><s1>2000-05-08</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0180302</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The refractive indices of In<sub>1-x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub> grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. © 2000 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indice réfraction</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Refractive index</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Ellipsométrie</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Ellipsometry</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fN21><s1>129</s1></fN21><fN47 i1="01" i2="1"><s0>0018M000088</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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