RHEED metrology of Stranski-Krastanov quantum dots
Identifieur interne : 007213 ( Main/Repository ); précédent : 007212; suivant : 007214RHEED metrology of Stranski-Krastanov quantum dots
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Abstract
Reflection high-energy electron diffraction (RHEED) patterns of uncapped pyramidal shaped InAs Stranski-Krastanov quantum dots fabricated on GaAs (001) substrate are investigated theoretically. Clear correlations between features in the RHEED images and quantum dot structural properties, as quantum dot facet orientation and quantum dot height, are established. In particular, it is shown that lateral facet orientation and dot heights can be directly extracted from the characteristic chevron angles and predicted intensity oscillations along the chevron tails, respectively.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">RHEED metrology of Stranski-Krastanov quantum dots</title><author><name sortKey="Feltrin, A" uniqKey="Feltrin A">A. Feltrin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaics & Nanostructures Laboratories, Center for Advanced Materials, University of Houston, 724 Science & Research Building 1</s1><s2>Houston, TX 77204-5004</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Houston, TX 77204-5004</wicri:noRegion></affiliation></author><author><name sortKey="Freundlich, A" uniqKey="Freundlich A">A. Freundlich</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaics & Nanostructures Laboratories, Center for Advanced Materials, University of Houston, 724 Science & Research Building 1</s1><s2>Houston, TX 77204-5004</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Houston, TX 77204-5004</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0270147</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0270147 INIST</idno><idno type="RBID">Pascal:07-0270147</idno><idno type="wicri:Area/Main/Corpus">007C82</idno><idno type="wicri:Area/Main/Repository">007213</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computerized simulation</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>Metrology</term><term>Nanostructured materials</term><term>Nanostructures</term><term>Quantum dots</term><term>RHEED</term><term>Stranski-Krastanov growth mode</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>RHEED</term><term>Métrologie</term><term>Point quantique</term><term>Nanomatériau</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Nanostructure</term><term>Composé minéral</term><term>Indium arséniure</term><term>InAs</term><term>Substrat GaAs</term><term>8107</term><term>8107T</term><term>Mode croissance Stranski-Krastanov</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Métrologie</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Reflection high-energy electron diffraction (RHEED) patterns of uncapped pyramidal shaped InAs Stranski-Krastanov quantum dots fabricated on GaAs (001) substrate are investigated theoretically. Clear correlations between features in the RHEED images and quantum dot structural properties, as quantum dot facet orientation and quantum dot height, are established. 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