CobaltMaghrebV1, Maroc, Analysis, bibRecord, 000194

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Identifieur interne : 000194 ( Maroc/Analysis ); précédent : 000193; suivant : 000195

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Auteurs : E. Bendada [Maroc] ; K. Raïs [Maroc] ; P. Mialhe [Maroc]

Source :

Radiation effects and defects in solids [ 1042-0150 ] ; 1998.

RBID : Pascal:99-0217974

Descripteurs français

Pascal (Inist)
- Fiabilité, Effet rayonnement, Rayonnement gamma, Cobalt Isotope, Transistor effet champ, Transistor MOS, Canal n, Transistor puissance, Recuit, Piégeage porteur charge, Cobalt 60.

English descriptors

KwdEn :
- Annealing, Charge carrier trapping, Cobalt Isotopes, Field effect transistor, Gamma radiation, MOS transistor, Power transistor, Radiation effect, Reliability, n channel.

Abstract

The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min^-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.

Affiliations:

Maroc

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to stream Main, to step Exploration: 000F00
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Pascal:99-0217974

Le document en format XML

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<country>Maroc</country>
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<author><name sortKey="Mialhe, P" sort="Mialhe, P" uniqKey="Mialhe P" first="P." last="Mialhe">P. Mialhe</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1>
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<term>Gamma radiation</term>
<term>MOS transistor</term>
<term>Power transistor</term>
<term>Radiation effect</term>
<term>Reliability</term>
<term>n channel</term>
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<term>Effet rayonnement</term>
<term>Rayonnement gamma</term>
<term>Cobalt Isotope</term>
<term>Transistor effet champ</term>
<term>Transistor MOS</term>
<term>Canal n</term>
<term>Transistor puissance</term>
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<term>Piégeage porteur charge</term>
<term>Cobalt 60</term>
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<front><div type="abstract" xml:lang="en">The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min<sup>-1</sup>
 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.</div>
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Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri