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Serveur d'exploration sur le cobalt au Maghreb

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Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Identifieur interne : 000305 ( PascalFrancis/Corpus ); précédent : 000304; suivant : 000306

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Auteurs : E. Bendada ; K. Raïs ; P. Mialhe

Source :

RBID : Pascal:99-0217974

Descripteurs français

English descriptors

Abstract

The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

pA  
A01 01  1    @0 1042-0150
A03   1    @0 Radiat. eff. defect solid
A05       @2 143
A06       @2 3
A08 01  1  ENG  @1 Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs
A11 01  1    @1 BENDADA (E.)
A11 02  1    @1 RAÏS (K.)
A11 03  1    @1 MIALHE (P.)
A14 01      @1 Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine @2 Errachidia @3 MAR @Z 1 aut. @Z 3 aut.
A14 02      @1 Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb @2 Doukkali, El Jadida @3 MAR @Z 2 aut.
A20       @1 247-254
A21       @1 1998
A23 01      @0 ENG
A43 01      @1 INIST @2 6764 @5 354000074765680040
A44       @0 0000 @1 © 1999 INIST-CNRS. All rights reserved.
A45       @0 22 ref.
A47 01  1    @0 99-0217974
A60       @1 P
A61       @0 A
A64 01  1    @0 Radiation effects and defects in solids
A66 01      @0 GBR
C01 01    ENG  @0 The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.
C02 01  X    @0 001D03B
C03 01  X  FRE  @0 Fiabilité @5 01
C03 01  X  ENG  @0 Reliability @5 01
C03 01  X  SPA  @0 Fiabilidad @5 01
C03 02  X  FRE  @0 Effet rayonnement @5 02
C03 02  X  ENG  @0 Radiation effect @5 02
C03 02  X  SPA  @0 Efecto radiación @5 02
C03 03  X  FRE  @0 Rayonnement gamma @5 03
C03 03  X  ENG  @0 Gamma radiation @5 03
C03 03  X  SPA  @0 Radiación gama @5 03
C03 04  X  FRE  @0 Cobalt Isotope @2 NC @2 NA @5 04
C03 04  X  ENG  @0 Cobalt Isotopes @2 NC @2 NA @5 04
C03 04  X  SPA  @0 Cobalto Isótopo @2 NC @2 NA @5 04
C03 05  X  FRE  @0 Transistor effet champ @5 05
C03 05  X  ENG  @0 Field effect transistor @5 05
C03 05  X  SPA  @0 Transistor efecto campo @5 05
C03 06  X  FRE  @0 Transistor MOS @5 06
C03 06  X  ENG  @0 MOS transistor @5 06
C03 06  X  SPA  @0 Transistor MOS @5 06
C03 07  X  FRE  @0 Canal n @5 07
C03 07  X  ENG  @0 n channel @5 07
C03 07  X  SPA  @0 Canal n @5 07
C03 08  X  FRE  @0 Transistor puissance @5 08
C03 08  X  ENG  @0 Power transistor @5 08
C03 08  X  SPA  @0 Transistor potencia @5 08
C03 09  X  FRE  @0 Recuit @5 10
C03 09  X  ENG  @0 Annealing @5 10
C03 09  X  SPA  @0 Recocido @5 10
C03 10  X  FRE  @0 Piégeage porteur charge @5 11
C03 10  X  ENG  @0 Charge carrier trapping @5 11
C03 10  X  SPA  @0 Captura portador carga @5 11
C03 11  X  FRE  @0 Cobalt 60 @4 INC @5 74
N21       @1 137

Format Inist (serveur)

NO : PASCAL 99-0217974 INIST
ET : Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs
AU : BENDADA (E.); RAÏS (K.); MIALHE (P.)
AF : Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine/Errachidia/Maroc (1 aut., 3 aut.); Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb/Doukkali, El Jadida/Maroc (2 aut.)
DT : Publication en série; Niveau analytique
SO : Radiation effects and defects in solids; ISSN 1042-0150; Royaume-Uni; Da. 1998; Vol. 143; No. 3; Pp. 247-254; Bibl. 22 ref.
LA : Anglais
EA : The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.
CC : 001D03B
FD : Fiabilité; Effet rayonnement; Rayonnement gamma; Cobalt Isotope; Transistor effet champ; Transistor MOS; Canal n; Transistor puissance; Recuit; Piégeage porteur charge; Cobalt 60
ED : Reliability; Radiation effect; Gamma radiation; Cobalt Isotopes; Field effect transistor; MOS transistor; n channel; Power transistor; Annealing; Charge carrier trapping
SD : Fiabilidad; Efecto radiación; Radiación gama; Cobalto Isótopo; Transistor efecto campo; Transistor MOS; Canal n; Transistor potencia; Recocido; Captura portador carga
LO : INIST-6764.354000074765680040
ID : 99-0217974

Links to Exploration step

Pascal:99-0217974

Le document en format XML

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<ET>Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs</ET>
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<AF>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine/Errachidia/Maroc (1 aut., 3 aut.); Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb/Doukkali, El Jadida/Maroc (2 aut.)</AF>
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<LA>Anglais</LA>
<EA>The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min
<sup>-1</sup>
are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.</EA>
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<ED>Reliability; Radiation effect; Gamma radiation; Cobalt Isotopes; Field effect transistor; MOS transistor; n channel; Power transistor; Annealing; Charge carrier trapping</ED>
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