CobaltMaghrebV1, PascalFrancis, Curation, bibRecord, 000398

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Identifieur interne : 000398 ( PascalFrancis/Curation ); précédent : 000397; suivant : 000399

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Auteurs : E. Bendada [Maroc] ; K. Raïs [Maroc] ; P. Mialhe [Maroc]

Source :

Radiation effects and defects in solids [ 1042-0150 ] ; 1998.

RBID : Pascal:99-0217974

Descripteurs français

Pascal (Inist)
- Fiabilité, Effet rayonnement, Rayonnement gamma, Cobalt Isotope, Transistor effet champ, Transistor MOS, Canal n, Transistor puissance, Recuit, Piégeage porteur charge, Cobalt 60.

English descriptors

KwdEn :
- Annealing, Charge carrier trapping, Cobalt Isotopes, Field effect transistor, Gamma radiation, MOS transistor, Power transistor, Radiation effect, Reliability, n channel.

Abstract

The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min^-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.

A01	`01`	`1`		`@0 1042-0150`
A03		`1`		`@0 Radiat. eff. defect solid`
A05				`@2 143`
A06				`@2 3`
A08	`01`	`1`	`ENG`	`@1 Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs`
A11	`01`	`1`		`@1 BENDADA (E.)`
A11	`02`	`1`		`@1 RAÏS (K.)`
A11	`03`	`1`		`@1 MIALHE (P.)`
A14	`01`			`@1 Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine @2 Errachidia @3 MAR @Z 1 aut. @Z 3 aut.`
A14	`02`			`@1 Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb @2 Doukkali, El Jadida @3 MAR @Z 2 aut.`
A20				`@1 247-254`
A21				`@1 1998`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 6764 @5 354000074765680040`
A44				`@0 0000 @1 © 1999 INIST-CNRS. All rights reserved.`
A45				`@0 22 ref.`
A47	`01`	`1`		`@0 99-0217974`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Radiation effects and defects in solids`
A66	`01`			`@0 GBR`
C01	`01`		`ENG`	`@0 The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min^-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.`
C02	`01`	`X`		`@0 001D03B`
C03	`01`	`X`	`FRE`	`@0 Fiabilité @5 01`
C03	`01`	`X`	`ENG`	`@0 Reliability @5 01`
C03	`01`	`X`	`SPA`	`@0 Fiabilidad @5 01`
C03	`02`	`X`	`FRE`	`@0 Effet rayonnement @5 02`
C03	`02`	`X`	`ENG`	`@0 Radiation effect @5 02`
C03	`02`	`X`	`SPA`	`@0 Efecto radiación @5 02`
C03	`03`	`X`	`FRE`	`@0 Rayonnement gamma @5 03`
C03	`03`	`X`	`ENG`	`@0 Gamma radiation @5 03`
C03	`03`	`X`	`SPA`	`@0 Radiación gama @5 03`
C03	`04`	`X`	`FRE`	`@0 Cobalt Isotope @2 NC @2 NA @5 04`
C03	`04`	`X`	`ENG`	`@0 Cobalt Isotopes @2 NC @2 NA @5 04`
C03	`04`	`X`	`SPA`	`@0 Cobalto Isótopo @2 NC @2 NA @5 04`
C03	`05`	`X`	`FRE`	`@0 Transistor effet champ @5 05`
C03	`05`	`X`	`ENG`	`@0 Field effect transistor @5 05`
C03	`05`	`X`	`SPA`	`@0 Transistor efecto campo @5 05`
C03	`06`	`X`	`FRE`	`@0 Transistor MOS @5 06`
C03	`06`	`X`	`ENG`	`@0 MOS transistor @5 06`
C03	`06`	`X`	`SPA`	`@0 Transistor MOS @5 06`
C03	`07`	`X`	`FRE`	`@0 Canal n @5 07`
C03	`07`	`X`	`ENG`	`@0 n channel @5 07`
C03	`07`	`X`	`SPA`	`@0 Canal n @5 07`
C03	`08`	`X`	`FRE`	`@0 Transistor puissance @5 08`
C03	`08`	`X`	`ENG`	`@0 Power transistor @5 08`
C03	`08`	`X`	`SPA`	`@0 Transistor potencia @5 08`
C03	`09`	`X`	`FRE`	`@0 Recuit @5 10`
C03	`09`	`X`	`ENG`	`@0 Annealing @5 10`
C03	`09`	`X`	`SPA`	`@0 Recocido @5 10`
C03	`10`	`X`	`FRE`	`@0 Piégeage porteur charge @5 11`
C03	`10`	`X`	`ENG`	`@0 Charge carrier trapping @5 11`
C03	`10`	`X`	`SPA`	`@0 Captura portador carga @5 11`
C03	`11`	`X`	`FRE`	`@0 Cobalt 60 @4 INC @5 74`
N21				`@1 137`

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Pascal:99-0217974

Le document en format XML

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<author><name sortKey="Bendada, E" sort="Bendada, E" uniqKey="Bendada E" first="E." last="Bendada">E. Bendada</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1>
<s2>Errachidia</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Maroc</country>
</affiliation>
</author>
<author><name sortKey="Rais, K" sort="Rais, K" uniqKey="Rais K" first="K." last="Raïs">K. Raïs</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb</s1>
<s2>Doukkali, El Jadida</s2>
<s3>MAR</s3>
<sZ>2 aut.</sZ>
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<author><name sortKey="Mialhe, P" sort="Mialhe, P" uniqKey="Mialhe P" first="P." last="Mialhe">P. Mialhe</name>
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<s2>Errachidia</s2>
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<series><title level="j" type="main">Radiation effects and defects in solids</title>
<title level="j" type="abbreviated">Radiat. eff. defect solid</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Charge carrier trapping</term>
<term>Cobalt Isotopes</term>
<term>Field effect transistor</term>
<term>Gamma radiation</term>
<term>MOS transistor</term>
<term>Power transistor</term>
<term>Radiation effect</term>
<term>Reliability</term>
<term>n channel</term>
</keywords>
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<term>Transistor MOS</term>
<term>Canal n</term>
<term>Transistor puissance</term>
<term>Recuit</term>
<term>Piégeage porteur charge</term>
<term>Cobalt 60</term>
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<front><div type="abstract" xml:lang="en">The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min<sup>-1</sup>
 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.</div>
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<fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1>
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<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb</s1>
<s2>Doukkali, El Jadida</s2>
<s3>MAR</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>247-254</s1>
</fA20>
<fA21><s1>1998</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>6764</s2>
<s5>354000074765680040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 1999 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>22 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>99-0217974</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Radiation effects and defects in solids</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min<sup>-1</sup>
 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03B</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Fiabilité</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Reliability</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Fiabilidad</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Effet rayonnement</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Radiation effect</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Efecto radiación</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Rayonnement gamma</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Gamma radiation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Radiación gama</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Cobalt Isotope</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Cobalt Isotopes</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Cobalto Isótopo</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Transistor effet champ</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Field effect transistor</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Transistor efecto campo</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Transistor MOS</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>MOS transistor</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Transistor MOS</s0>
<s5>06</s5>
</fC03>
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<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>n channel</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Canal n</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Transistor puissance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Power transistor</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Transistor potencia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Recuit</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Annealing</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Recocido</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Piégeage porteur charge</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Charge carrier trapping</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Captura portador carga</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Cobalt 60</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>137</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

Source :

Descripteurs français

English descriptors

Abstract

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