Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs
Identifieur interne : 000325 ( PascalFrancis/Checkpoint ); précédent : 000324; suivant : 000326Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs
Auteurs : E. Bendada [Maroc] ; K. Raïs [Maroc] ; P. Mialhe [Maroc]Source :
- Radiation effects and defects in solids [ 1042-0150 ] ; 1998.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min-1 are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.
Affiliations:
Links toward previous steps (curation, corpus...)
Links to Exploration step
Pascal:99-0217974Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs</title><author><name sortKey="Bendada, E" sort="Bendada, E" uniqKey="Bendada E" first="E." last="Bendada">E. Bendada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1><s2>Errachidia</s2><s3>MAR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>Errachidia</wicri:noRegion></affiliation></author><author><name sortKey="Rais, K" sort="Rais, K" uniqKey="Rais K" first="K." last="Raïs">K. Raïs</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb</s1><s2>Doukkali, El Jadida</s2><s3>MAR</s3><sZ>2 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>Doukkali, El Jadida</wicri:noRegion></affiliation></author><author><name sortKey="Mialhe, P" sort="Mialhe, P" uniqKey="Mialhe P" first="P." last="Mialhe">P. Mialhe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1><s2>Errachidia</s2><s3>MAR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>Errachidia</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">99-0217974</idno><date when="1998">1998</date><idno type="stanalyst">PASCAL 99-0217974 INIST</idno><idno type="RBID">Pascal:99-0217974</idno><idno type="wicri:Area/PascalFrancis/Corpus">000305</idno><idno type="wicri:Area/PascalFrancis/Curation">000398</idno><idno type="wicri:Area/PascalFrancis/Checkpoint">000325</idno><idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000325</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs</title><author><name sortKey="Bendada, E" sort="Bendada, E" uniqKey="Bendada E" first="E." last="Bendada">E. Bendada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1><s2>Errachidia</s2><s3>MAR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>Errachidia</wicri:noRegion></affiliation></author><author><name sortKey="Rais, K" sort="Rais, K" uniqKey="Rais K" first="K." last="Raïs">K. Raïs</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb</s1><s2>Doukkali, El Jadida</s2><s3>MAR</s3><sZ>2 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>Doukkali, El Jadida</wicri:noRegion></affiliation></author><author><name sortKey="Mialhe, P" sort="Mialhe, P" uniqKey="Mialhe P" first="P." last="Mialhe">P. Mialhe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1><s2>Errachidia</s2><s3>MAR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>Errachidia</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Radiation effects and defects in solids</title><title level="j" type="abbreviated">Radiat. eff. defect solid</title><idno type="ISSN">1042-0150</idno><imprint><date when="1998">1998</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Radiation effects and defects in solids</title><title level="j" type="abbreviated">Radiat. eff. defect solid</title><idno type="ISSN">1042-0150</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Charge carrier trapping</term><term>Cobalt Isotopes</term><term>Field effect transistor</term><term>Gamma radiation</term><term>MOS transistor</term><term>Power transistor</term><term>Radiation effect</term><term>Reliability</term><term>n channel</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fiabilité</term><term>Effet rayonnement</term><term>Rayonnement gamma</term><term>Cobalt Isotope</term><term>Transistor effet champ</term><term>Transistor MOS</term><term>Canal n</term><term>Transistor puissance</term><term>Recuit</term><term>Piégeage porteur charge</term><term>Cobalt 60</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min<sup>-1</sup> are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1042-0150</s0></fA01><fA03 i2="1"><s0>Radiat. eff. defect solid</s0></fA03><fA05><s2>143</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs</s1></fA08><fA11 i1="01" i2="1"><s1>BENDADA (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>RAÏS (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>MIALHE (P.)</s1></fA11><fA14 i1="01"><s1>Département de Génie Electrique, University My Ismaïl - F.S.T., B.P. 509 Boutalamine</s1><s2>Errachidia</s2><s3>MAR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb</s1><s2>Doukkali, El Jadida</s2><s3>MAR</s3><sZ>2 aut.</sZ></fA14><fA20><s1>247-254</s1></fA20><fA21><s1>1998</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>6764</s2><s5>354000074765680040</s5></fA43><fA44><s0>0000</s0><s1>© 1999 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>99-0217974</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Radiation effects and defects in solids</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min<sup>-1</sup> are presented Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03B</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Fiabilité</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Reliability</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Fiabilidad</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Effet rayonnement</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Radiation effect</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Efecto radiación</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Rayonnement gamma</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Gamma radiation</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Radiación gama</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Cobalt Isotope</s0><s2>NC</s2><s2>NA</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Cobalt Isotopes</s0><s2>NC</s2><s2>NA</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Cobalto Isótopo</s0><s2>NC</s2><s2>NA</s2><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Transistor effet champ</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Field effect transistor</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Transistor efecto campo</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Transistor MOS</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>MOS transistor</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Transistor MOS</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Canal n</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>n channel</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Canal n</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Transistor puissance</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Power transistor</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Transistor potencia</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Recuit</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Annealing</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Recocido</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Piégeage porteur charge</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Charge carrier trapping</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Captura portador carga</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Cobalt 60</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>137</s1></fN21></pA></standard></inist><affiliations><list><country><li>Maroc</li></country></list><tree><country name="Maroc"><noRegion><name sortKey="Bendada, E" sort="Bendada, E" uniqKey="Bendada E" first="E." last="Bendada">E. Bendada</name></noRegion><name sortKey="Mialhe, P" sort="Mialhe, P" uniqKey="Mialhe P" first="P." last="Mialhe">P. Mialhe</name><name sortKey="Rais, K" sort="Rais, K" uniqKey="Rais K" first="K." last="Raïs">K. Raïs</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/CobaltMaghrebV1/Data/PascalFrancis/Checkpoint
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000325 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/PascalFrancis/Checkpoint/biblio.hfd -nk 000325 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Terre
|area= CobaltMaghrebV1
|flux= PascalFrancis
|étape= Checkpoint
|type= RBID
|clé= Pascal:99-0217974
|texte= Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs
}}
| This area was generated with Dilib version V0.6.32. |  |