Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Identifieur interne : 002A02 ( Main/Exploration ); précédent : 002A01; suivant : 002A03Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Auteurs : R. A. Hamm [États-Unis] ; S. Chandrasekhar [États-Unis] ; L. Lunardi [États-Unis] ; M. Geva [États-Unis]Source :
- Journal of Crystal Growth [ 0022-0248 ] ; 1994.
Abstract
Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.
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DOI: 10.1016/0022-0248(94)00862-0
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Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.</div></front></TEI><affiliations><list><country><li>États-Unis</li></country></list><tree><country name="États-Unis"><noRegion><name sortKey="Hamm, R A" sort="Hamm, R A" uniqKey="Hamm R" first="R. A." last="Hamm">R. A. Hamm</name></noRegion><name sortKey="Chandrasekhar, S" sort="Chandrasekhar, S" uniqKey="Chandrasekhar S" first="S." last="Chandrasekhar">S. Chandrasekhar</name><name sortKey="Geva, M" sort="Geva, M" uniqKey="Geva M" first="M." last="Geva">M. Geva</name><name sortKey="Lunardi, L" sort="Lunardi, L" uniqKey="Lunardi L" first="L." last="Lunardi">L. Lunardi</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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