Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Identifieur interne : 002187 ( Istex/Corpus ); précédent : 002186; suivant : 002188Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Auteurs : R. A. Hamm ; S. Chandrasekhar ; L. Lunardi ; M. GevaSource :
- Journal of Crystal Growth [ 0022-0248 ] ; 1994.
Abstract
Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.
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DOI: 10.1016/0022-0248(94)00862-0
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Geva</name><affiliation><mods:affiliation>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:31C02A1556E58C074BD507EAC9315CE2D98F8C66</idno><date when="1995" year="1995">1995</date><idno type="doi">10.1016/0022-0248(94)00862-0</idno><idno type="url">https://api.istex.fr/document/31C02A1556E58C074BD507EAC9315CE2D98F8C66/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">002187</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy</title><author><name sortKey="Hamm, R A" sort="Hamm, R A" uniqKey="Hamm R" first="R. A." last="Hamm">R. A. Hamm</name><affiliation><mods:affiliation>AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA</mods:affiliation></affiliation></author><author><name sortKey="Chandrasekhar, S" sort="Chandrasekhar, S" uniqKey="Chandrasekhar S" first="S." last="Chandrasekhar">S. Chandrasekhar</name><affiliation><mods:affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</mods:affiliation></affiliation></author><author><name sortKey="Lunardi, L" sort="Lunardi, L" uniqKey="Lunardi L" first="L." last="Lunardi">L. Lunardi</name><affiliation><mods:affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</mods:affiliation></affiliation></author><author><name sortKey="Geva, M" sort="Geva, M" uniqKey="Geva M" first="M." last="Geva">M. Geva</name><affiliation><mods:affiliation>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Crystal Growth</title><title level="j" type="abbrev">CRYS</title><idno type="ISSN">0022-0248</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1994">1994</date><biblScope unit="volume">148</biblScope><biblScope unit="issue">1–2</biblScope><biblScope unit="page" from="1">1</biblScope><biblScope unit="page" to="7">7</biblScope></imprint><idno type="ISSN">0022-0248</idno></series><idno type="istex">31C02A1556E58C074BD507EAC9315CE2D98F8C66</idno><idno type="DOI">10.1016/0022-0248(94)00862-0</idno><idno type="PII">0022-0248(94)00862-0</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0022-0248</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.</div></front></TEI><istex><corpusName>elsevier</corpusName><author><json:item><name>R.A. Hamm</name><affiliations><json:string>AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA</json:string></affiliations></json:item><json:item><name>S. Chandrasekhar</name><affiliations><json:string>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</json:string></affiliations></json:item><json:item><name>L. Lunardi</name><affiliations><json:string>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</json:string></affiliations></json:item><json:item><name>M. Geva</name><affiliations><json:string>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</json:string></affiliations></json:item></author><language><json:string>eng</json:string></language><abstract>Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. 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Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.</p></abstract></profileDesc><revisionDesc><change when="1994-08-26">Received</change><change when="1994-09-29">Modified</change><change when="1994">Published</change></revisionDesc></teiHeader></istex:fulltextTEI></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>CRYS</jid><aid>94008620</aid><ce:pii>0022-0248(94)00862-0</ce:pii><ce:doi>10.1016/0022-0248(94)00862-0</ce:doi><ce:copyright type="unknown" year="1995"></ce:copyright></item-info><head><ce:dochead><ce:textfn>Classical semiconductor</ce:textfn></ce:dochead><ce:title>Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy</ce:title><ce:author-group><ce:author><ce:given-name>R.A.</ce:given-name><ce:surname>Hamm</ce:surname><ce:cross-ref refid="COR1"><ce:sup>∗</ce:sup></ce:cross-ref><ce:cross-ref refid="AFF1"><ce:sup>a</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>S.</ce:given-name><ce:surname>Chandrasekhar</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>b</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>L.</ce:given-name><ce:surname>Lunardi</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>b</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>M.</ce:given-name><ce:surname>Geva</ce:surname><ce:cross-ref refid="AFF3"><ce:sup>c</ce:sup></ce:cross-ref></ce:author><ce:affiliation id="AFF1"><ce:label>a</ce:label><ce:textfn>AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA</ce:textfn></ce:affiliation><ce:affiliation id="AFF2"><ce:label>b</ce:label><ce:textfn>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</ce:textfn></ce:affiliation><ce:affiliation id="AFF3"><ce:label>c</ce:label><ce:textfn>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</ce:textfn></ce:affiliation><ce:correspondence id="COR1"><ce:label>∗</ce:label><ce:text>Corresponding author.</ce:text></ce:correspondence></ce:author-group><ce:date-received day="26" month="8" year="1994"></ce:date-received><ce:date-revised day="29" month="9" year="1994"></ce:date-revised><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>Carbon-doped In<ce:inf>0.53</ce:inf>Ga<ce:inf>0.47</ce:inf>As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 10<ce:sup>17</ce:sup> to 7 × 10<ce:sup>19</ce:sup> cm<ce:sup>−3</ce:sup> were measured with mobilities ranging from 100 to 45 cm<ce:sup>2</ce:sup>/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration <math altimg="si1.gif">∼ <rm>flow</rm><sup>−<fr shape="sol"><nu>3</nu><de>4</de></fr></sup></math>). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.</ce:simple-para></ce:abstract-sec></ce:abstract></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy</title></titleInfo><name type="personal"><namePart type="given">R.A.</namePart><namePart type="family">Hamm</namePart><affiliation>AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA</affiliation><description>Corresponding author.</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Chandrasekhar</namePart><affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">L.</namePart><namePart type="family">Lunardi</namePart><affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Geva</namePart><affiliation>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article"></genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1994</dateIssued><dateCaptured encoding="w3cdtf">1994-08-26</dateCaptured><dateModified encoding="w3cdtf">1994-09-29</dateModified><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="en">Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.</abstract><note type="content">Section title: Classical semiconductor</note><relatedItem type="host"><titleInfo><title>Journal of Crystal Growth</title></titleInfo><titleInfo type="abbreviated"><title>CRYS</title></titleInfo><genre type="Journal">journal</genre><originInfo><dateIssued encoding="w3cdtf">19950202</dateIssued></originInfo><identifier type="ISSN">0022-0248</identifier><identifier type="PII">S0022-0248(00)X0033-4</identifier><part><date>19950202</date><detail type="volume"><number>148</number><caption>vol.</caption></detail><detail type="issue"><number>1–2</number><caption>no.</caption></detail><extent unit="issue pages"><start>1</start><end>210</end></extent><extent unit="pages"><start>1</start><end>7</end></extent></part></relatedItem><identifier type="istex">31C02A1556E58C074BD507EAC9315CE2D98F8C66</identifier><identifier type="DOI">10.1016/0022-0248(94)00862-0</identifier><identifier type="PII">0022-0248(94)00862-0</identifier><recordInfo><recordContentSource>ELSEVIER</recordContentSource></recordInfo></mods></metadata><enrichments><istex:catWosTEI uri="https://api.istex.fr/document/31C02A1556E58C074BD507EAC9315CE2D98F8C66/enrichments/catWos"><teiHeader><profileDesc><textClass><classCode scheme="WOS">PHYSICS, APPLIED</classCode><classCode scheme="WOS">CRYSTALLOGRAPHY</classCode><classCode scheme="WOS">MATERIALS SCIENCE, MULTIDISCIPLINARY</classCode></textClass></profileDesc></teiHeader></istex:catWosTEI></enrichments><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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