Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Identifieur interne : 002038 ( Istex/Curation ); précédent : 002037; suivant : 002039Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Auteurs : R. A. Hamm [États-Unis] ; S. Chandrasekhar [États-Unis] ; L. Lunardi [États-Unis] ; M. Geva [États-Unis]Source :
- Journal of Crystal Growth [ 0022-0248 ] ; 1994.
Abstract
Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.
Url:
DOI: 10.1016/0022-0248(94)00862-0
Links toward previous steps (curation, corpus...)
- to stream Istex, to step Corpus: Pour aller vers cette notice dans l'étape Curation :002187
Links to Exploration step
ISTEX:31C02A1556E58C074BD507EAC9315CE2D98F8C66Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy</title><author><name sortKey="Hamm, R A" sort="Hamm, R A" uniqKey="Hamm R" first="R. A." last="Hamm">R. A. Hamm</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Murray Hill, New Jersey 07974</wicri:regionArea></affiliation></author><author><name sortKey="Chandrasekhar, S" sort="Chandrasekhar, S" uniqKey="Chandrasekhar S" first="S." last="Chandrasekhar">S. Chandrasekhar</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733</wicri:regionArea></affiliation></author><author><name sortKey="Lunardi, L" sort="Lunardi, L" uniqKey="Lunardi L" first="L." last="Lunardi">L. Lunardi</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733</wicri:regionArea></affiliation></author><author><name sortKey="Geva, M" sort="Geva, M" uniqKey="Geva M" first="M." last="Geva">M. Geva</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:31C02A1556E58C074BD507EAC9315CE2D98F8C66</idno><date when="1995" year="1995">1995</date><idno type="doi">10.1016/0022-0248(94)00862-0</idno><idno type="url">https://api.istex.fr/document/31C02A1556E58C074BD507EAC9315CE2D98F8C66/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">002187</idno><idno type="wicri:Area/Istex/Curation">002038</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy</title><author><name sortKey="Hamm, R A" sort="Hamm, R A" uniqKey="Hamm R" first="R. A." last="Hamm">R. A. Hamm</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Murray Hill, New Jersey 07974</wicri:regionArea></affiliation></author><author><name sortKey="Chandrasekhar, S" sort="Chandrasekhar, S" uniqKey="Chandrasekhar S" first="S." last="Chandrasekhar">S. Chandrasekhar</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733</wicri:regionArea></affiliation></author><author><name sortKey="Lunardi, L" sort="Lunardi, L" uniqKey="Lunardi L" first="L." last="Lunardi">L. Lunardi</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733</wicri:regionArea></affiliation></author><author><name sortKey="Geva, M" sort="Geva, M" uniqKey="Geva M" first="M." last="Geva">M. Geva</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, SSTC, Breinigsville, Pennsylvania 19031</wicri:regionArea></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Crystal Growth</title><title level="j" type="abbrev">CRYS</title><idno type="ISSN">0022-0248</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1994">1994</date><biblScope unit="volume">148</biblScope><biblScope unit="issue">1–2</biblScope><biblScope unit="page" from="1">1</biblScope><biblScope unit="page" to="7">7</biblScope></imprint><idno type="ISSN">0022-0248</idno></series><idno type="istex">31C02A1556E58C074BD507EAC9315CE2D98F8C66</idno><idno type="DOI">10.1016/0022-0248(94)00862-0</idno><idno type="PII">0022-0248(94)00862-0</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0022-0248</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Carbon-doped In0.53Ga0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 1017 to 7 × 1019 cm−3 were measured with mobilities ranging from 100 to 45 cm2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow− 3 4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.</div></front></TEI></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Ticri/CIDE/explor/OcrV1/Data/Istex/Curation
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002038 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Istex/Curation/biblio.hfd -nk 002038 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Ticri/CIDE
|area= OcrV1
|flux= Istex
|étape= Curation
|type= RBID
|clé= ISTEX:31C02A1556E58C074BD507EAC9315CE2D98F8C66
|texte= Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
}}
| This area was generated with Dilib version V0.6.32. |  |