ThuliumV1, Pascal, Curation, bibRecord, 000A55

Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser

Identifieur interne : 000A55 ( Pascal/Curation ); précédent : 000A54; suivant : 000A56

Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser

Auteurs : C. Nagasawa [Japon] ; D. Sakaizawa [Japon] ; H. Hara [Japon] ; K. Mizutani [Japon]

Source :

Optics communications [ 0030-4018 ] ; 2004.

RBID : Pascal:04-0233908

Descripteurs français

Pascal (Inist)
- Cavité laser, Laser continu, Matériau dopé, Addition thulium, Addition holmium, Matériau laser, Laser solide, Dispositif expérimental, Yttrium Lithium Fluorure, Composé ternaire, Etude expérimentale, Pompage par diode, Puissance sortie, Yttrium fluorure, Lithium fluorure, Puissance pompage, LiYF4:Ho:Tm, YLF:Ho:Tm, F Li Y, 4260D, 4255R.

English descriptors

KwdEn :
- CW lasers, Diode pumping, Doped materials, Experimental device, Experimental study, Holmium additions, Laser cavities, Laser materials, Lithium fluorides, Output power, Solid state lasers, Ternary compounds, Thulium additions, Yttrium Lithium Fluorides, Yttrium fluorides.

Abstract

The lasing characteristics of a cw Tm,Ho:YLF microchip laser in a double cavity configuration are reported. The oscillation wavelength decreased continuously and periodic mode hopping occurred as the absorbed pump power increased. Furthermore, the output power could be changed by varying the thickness of the air gap distance at constant absorbed pump power.

A01	`01`	`1`		`@0 0030-4018`
A02	`01`			`@0 OPCOB8`
A03		`1`		`@0 Opt. commun.`
A05				`@2 234`
A06				`@2 1-6`
A08	`01`	`1`	`ENG`	`@1 Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser`
A11	`01`	`1`		`@1 NAGASAWA (C.)`
A11	`02`	`1`		`@1 SAKAIZAWA (D.)`
A11	`03`	`1`		`@1 HARA (H.)`
A11	`04`	`1`		`@1 MIZUTANI (K.)`
A14	`01`			`@1 Department of Electrical Engineering, Tokyo Metropolitan University 1-1, Minamiosawa @2 Hachioji, Tokyo 192-0397 @3 JPN @Z 1 aut. @Z 2 aut.`
A14	`02`			`@1 Leadintex Inc. 1-3, Nihonbashi-odennma @2 chuo, Tokyo 103-0011 @3 JPN @Z 3 aut.`
A14	`03`			`@1 Communication Research Laboratory 4-2-1, Nukui-kita @2 Koganei, Tokyo 184-8795 @3 JPN @Z 4 aut.`
A20				`@1 301-304`
A21				`@1 2004`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 14750 @5 354000117018520360`
A44				`@0 0000 @1 © 2004 INIST-CNRS. All rights reserved.`
A45				`@0 6 ref.`
A47	`01`	`1`		`@0 04-0233908`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Optics communications`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	`@0 The lasing characteristics of a cw Tm,Ho:YLF microchip laser in a double cavity configuration are reported. The oscillation wavelength decreased continuously and periodic mode hopping occurred as the absorbed pump power increased. Furthermore, the output power could be changed by varying the thickness of the air gap distance at constant absorbed pump power.`
C02	`01`	`3`		`@0 001B40B60D`
C02	`02`	`3`		`@0 001B40B55R`
C03	`01`	`3`	`FRE`	`@0 Cavité laser @5 01`
C03	`01`	`3`	`ENG`	`@0 Laser cavities @5 01`
C03	`02`	`3`	`FRE`	`@0 Laser continu @5 02`
C03	`02`	`3`	`ENG`	`@0 CW lasers @5 02`
C03	`03`	`3`	`FRE`	`@0 Matériau dopé @5 03`
C03	`03`	`3`	`ENG`	`@0 Doped materials @5 03`
C03	`04`	`3`	`FRE`	`@0 Addition thulium @5 04`
C03	`04`	`3`	`ENG`	`@0 Thulium additions @5 04`
C03	`05`	`3`	`FRE`	`@0 Addition holmium @5 05`
C03	`05`	`3`	`ENG`	`@0 Holmium additions @5 05`
C03	`06`	`3`	`FRE`	`@0 Matériau laser @5 06`
C03	`06`	`3`	`ENG`	`@0 Laser materials @5 06`
C03	`07`	`3`	`FRE`	`@0 Laser solide @5 07`
C03	`07`	`3`	`ENG`	`@0 Solid state lasers @5 07`
C03	`08`	`X`	`FRE`	`@0 Dispositif expérimental @5 08`
C03	`08`	`X`	`ENG`	`@0 Experimental device @5 08`
C03	`08`	`X`	`SPA`	`@0 Dispositivo experimental @5 08`
C03	`09`	`3`	`FRE`	`@0 Yttrium Lithium Fluorure @2 NC @2 NA @5 09`
C03	`09`	`3`	`ENG`	`@0 Yttrium Lithium Fluorides @2 NC @2 NA @5 09`
C03	`10`	`3`	`FRE`	`@0 Composé ternaire @5 10`
C03	`10`	`3`	`ENG`	`@0 Ternary compounds @5 10`
C03	`11`	`3`	`FRE`	`@0 Etude expérimentale @5 11`
C03	`11`	`3`	`ENG`	`@0 Experimental study @5 11`
C03	`12`	`X`	`FRE`	`@0 Pompage par diode @5 29`
C03	`12`	`X`	`ENG`	`@0 Diode pumping @5 29`
C03	`12`	`X`	`SPA`	`@0 Bombeo por diodo @5 29`
C03	`13`	`X`	`FRE`	`@0 Puissance sortie @5 42`
C03	`13`	`X`	`ENG`	`@0 Output power @5 42`
C03	`13`	`X`	`SPA`	`@0 Potencia salida @5 42`
C03	`14`	`3`	`FRE`	`@0 Yttrium fluorure @2 NK @5 55`
C03	`14`	`3`	`ENG`	`@0 Yttrium fluorides @2 NK @5 55`
C03	`15`	`3`	`FRE`	`@0 Lithium fluorure @2 NK @5 56`
C03	`15`	`3`	`ENG`	`@0 Lithium fluorides @2 NK @5 56`
C03	`16`	`3`	`FRE`	`@0 Puissance pompage @4 INC @5 71`
C03	`17`	`3`	`FRE`	`@0 LiYF4:Ho:Tm @4 INC @5 75`
C03	`18`	`3`	`FRE`	`@0 YLF:Ho:Tm @4 INC @5 76`
C03	`19`	`3`	`FRE`	`@0 F Li Y @4 INC @5 77`
C03	`20`	`3`	`FRE`	`@0 4260D @4 INC @5 91`
C03	`21`	`3`	`FRE`	`@0 4255R @2 PAC @4 INC @5 92`
N21				`@1 152`
N82				`@1 PSI`

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Le document en format XML

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<author><name sortKey="Nagasawa, C" sort="Nagasawa, C" uniqKey="Nagasawa C" first="C." last="Nagasawa">C. Nagasawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Tokyo Metropolitan University 1-1, Minamiosawa</s1>
<s2>Hachioji, Tokyo 192-0397</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
</affiliation>
</author>
<author><name sortKey="Sakaizawa, D" sort="Sakaizawa, D" uniqKey="Sakaizawa D" first="D." last="Sakaizawa">D. Sakaizawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Tokyo Metropolitan University 1-1, Minamiosawa</s1>
<s2>Hachioji, Tokyo 192-0397</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<country>Japon</country>
</affiliation>
</author>
<author><name sortKey="Hara, H" sort="Hara, H" uniqKey="Hara H" first="H." last="Hara">H. Hara</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Leadintex Inc. 1-3, Nihonbashi-odennma</s1>
<s2>chuo, Tokyo 103-0011</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
</affiliation>
</author>
<author><name sortKey="Mizutani, K" sort="Mizutani, K" uniqKey="Mizutani K" first="K." last="Mizutani">K. Mizutani</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Communication Research Laboratory 4-2-1, Nukui-kita</s1>
<s2>Koganei, Tokyo 184-8795</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
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<publicationStmt><idno type="wicri:source">INIST</idno>
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<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 04-0233908 INIST</idno>
<idno type="RBID">Pascal:04-0233908</idno>
<idno type="wicri:Area/Pascal/Corpus">000A55</idno>
<idno type="wicri:Area/Pascal/Curation">000A55</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser</title>
<author><name sortKey="Nagasawa, C" sort="Nagasawa, C" uniqKey="Nagasawa C" first="C." last="Nagasawa">C. Nagasawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Tokyo Metropolitan University 1-1, Minamiosawa</s1>
<s2>Hachioji, Tokyo 192-0397</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
</affiliation>
</author>
<author><name sortKey="Sakaizawa, D" sort="Sakaizawa, D" uniqKey="Sakaizawa D" first="D." last="Sakaizawa">D. Sakaizawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Tokyo Metropolitan University 1-1, Minamiosawa</s1>
<s2>Hachioji, Tokyo 192-0397</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
</affiliation>
</author>
<author><name sortKey="Hara, H" sort="Hara, H" uniqKey="Hara H" first="H." last="Hara">H. Hara</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Leadintex Inc. 1-3, Nihonbashi-odennma</s1>
<s2>chuo, Tokyo 103-0011</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
</affiliation>
</author>
<author><name sortKey="Mizutani, K" sort="Mizutani, K" uniqKey="Mizutani K" first="K." last="Mizutani">K. Mizutani</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Communication Research Laboratory 4-2-1, Nukui-kita</s1>
<s2>Koganei, Tokyo 184-8795</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Optics communications</title>
<title level="j" type="abbreviated">Opt. commun.</title>
<idno type="ISSN">0030-4018</idno>
<imprint><date when="2004">2004</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Optics communications</title>
<title level="j" type="abbreviated">Opt. commun.</title>
<idno type="ISSN">0030-4018</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CW lasers</term>
<term>Diode pumping</term>
<term>Doped materials</term>
<term>Experimental device</term>
<term>Experimental study</term>
<term>Holmium additions</term>
<term>Laser cavities</term>
<term>Laser materials</term>
<term>Lithium fluorides</term>
<term>Output power</term>
<term>Solid state lasers</term>
<term>Ternary compounds</term>
<term>Thulium additions</term>
<term>Yttrium Lithium Fluorides</term>
<term>Yttrium fluorides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cavité laser</term>
<term>Laser continu</term>
<term>Matériau dopé</term>
<term>Addition thulium</term>
<term>Addition holmium</term>
<term>Matériau laser</term>
<term>Laser solide</term>
<term>Dispositif expérimental</term>
<term>Yttrium Lithium Fluorure</term>
<term>Composé ternaire</term>
<term>Etude expérimentale</term>
<term>Pompage par diode</term>
<term>Puissance sortie</term>
<term>Yttrium fluorure</term>
<term>Lithium fluorure</term>
<term>Puissance pompage</term>
<term>LiYF4:Ho:Tm</term>
<term>YLF:Ho:Tm</term>
<term>F Li Y</term>
<term>4260D</term>
<term>4255R</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The lasing characteristics of a cw Tm,Ho:YLF microchip laser in a double cavity configuration are reported. The oscillation wavelength decreased continuously and periodic mode hopping occurred as the absorbed pump power increased. Furthermore, the output power could be changed by varying the thickness of the air gap distance at constant absorbed pump power.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0030-4018</s0>
</fA01>
<fA02 i1="01"><s0>OPCOB8</s0>
</fA02>
<fA03 i2="1"><s0>Opt. commun.</s0>
</fA03>
<fA05><s2>234</s2>
</fA05>
<fA06><s2>1-6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>NAGASAWA (C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SAKAIZAWA (D.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HARA (H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MIZUTANI (K.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical Engineering, Tokyo Metropolitan University 1-1, Minamiosawa</s1>
<s2>Hachioji, Tokyo 192-0397</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Leadintex Inc. 1-3, Nihonbashi-odennma</s1>
<s2>chuo, Tokyo 103-0011</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Communication Research Laboratory 4-2-1, Nukui-kita</s1>
<s2>Koganei, Tokyo 184-8795</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>301-304</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>14750</s2>
<s5>354000117018520360</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2004 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>6 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>04-0233908</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Optics communications</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The lasing characteristics of a cw Tm,Ho:YLF microchip laser in a double cavity configuration are reported. The oscillation wavelength decreased continuously and periodic mode hopping occurred as the absorbed pump power increased. Furthermore, the output power could be changed by varying the thickness of the air gap distance at constant absorbed pump power.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B60D</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B55R</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Cavité laser</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Laser cavities</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser continu</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>CW lasers</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Addition holmium</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Holmium additions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Matériau laser</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Laser materials</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Laser solide</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Solid state lasers</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Dispositif expérimental</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Experimental device</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Dispositivo experimental</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Yttrium Lithium Fluorure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Yttrium Lithium Fluorides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Pompage par diode</s0>
<s5>29</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Diode pumping</s0>
<s5>29</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Bombeo por diodo</s0>
<s5>29</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>42</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Output power</s0>
<s5>42</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>42</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Yttrium fluorure</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Yttrium fluorides</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Lithium fluorure</s0>
<s2>NK</s2>
<s5>56</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Lithium fluorides</s0>
<s2>NK</s2>
<s5>56</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Puissance pompage</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>LiYF4:Ho:Tm</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>YLF:Ho:Tm</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>F Li Y</s0>
<s4>INC</s4>
<s5>77</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>4260D</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>4255R</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>152</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser

Lasing characteristics of a CW Tm, Ho:YLF double cavity microchip laser

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