Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3
Identifieur interne : 000629 ( Pascal/Checkpoint ); précédent : 000628; suivant : 000630Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3
Auteurs : B. Q. Yao [République populaire de Chine] ; L. L. Zheng [République populaire de Chine] ; R. L. Zhou [République populaire de Chine] ; X. M. Duan [République populaire de Chine] ; Y. J. Zhang [République populaire de Chine] ; Y. L. Ju [République populaire de Chine] ; Y. Z. Wang [République populaire de Chine] ; G. J. Zhao [République populaire de Chine] ; Q. Dong [République populaire de Chine]Source :
- Laser physics [ 1054-660X ] ; 2008.
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- Pascal (Inist)
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Abstract
-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO<sub>3</sub>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term>
<term>CW lasers</term>
<term>Doped materials</term>
<term>End pumping</term>
<term>Holmium additions</term>
<term>Laser pumping</term>
<term>Linear polarization</term>
<term>Output power</term>
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<term>Pompage par laser</term>
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<term>Polarisation rectiligne</term>
<term>Composé ternaire</term>
<term>Matériau dopé</term>
<term>Addition holmium</term>
<term>Puissance sortie</term>
<term>YAlO3</term>
<term>Al O Y</term>
<term>4260P</term>
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<front><div type="abstract" xml:lang="en">-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho<sup>3+</sup>
-doped 20-mm-long YAlO<sub>3</sub>
crystal (b cut), the Ho:YAlO<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</div>
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<fC01 i1="01" l="ENG"><s0>-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho<sup>3+</sup>
-doped 20-mm-long YAlO<sub>3</sub>
crystal (b cut), the Ho:YAlO<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</s0>
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</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Laser solide</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Solid state lasers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Ambient temperature</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Polarisation rectiligne</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Linear polarization</s0>
<s5>42</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Addition holmium</s0>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Holmium additions</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Output power</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>YAlO3</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Al O Y</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>4260P</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>4255R</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>089</s1>
</fN21>
</pA>
</standard>
</inist>
<affiliations><list><country><li>République populaire de Chine</li>
</country>
</list>
<tree><country name="République populaire de Chine"><noRegion><name sortKey="Yao, B Q" sort="Yao, B Q" uniqKey="Yao B" first="B. Q." last="Yao">B. Q. Yao</name>
</noRegion>
<name sortKey="Dong, Q" sort="Dong, Q" uniqKey="Dong Q" first="Q." last="Dong">Q. Dong</name>
<name sortKey="Duan, X M" sort="Duan, X M" uniqKey="Duan X" first="X. M." last="Duan">X. M. Duan</name>
<name sortKey="Ju, Y L" sort="Ju, Y L" uniqKey="Ju Y" first="Y. L." last="Ju">Y. L. Ju</name>
<name sortKey="Wang, Y Z" sort="Wang, Y Z" uniqKey="Wang Y" first="Y. Z." last="Wang">Y. Z. Wang</name>
<name sortKey="Zhang, Y J" sort="Zhang, Y J" uniqKey="Zhang Y" first="Y. J." last="Zhang">Y. J. Zhang</name>
<name sortKey="Zhao, G J" sort="Zhao, G J" uniqKey="Zhao G" first="G. J." last="Zhao">G. J. Zhao</name>
<name sortKey="Zheng, L L" sort="Zheng, L L" uniqKey="Zheng L" first="L. L." last="Zheng">L. L. Zheng</name>
<name sortKey="Zhou, R L" sort="Zhou, R L" uniqKey="Zhou R" first="R. L." last="Zhou">R. L. Zhou</name>
</country>
</tree>
</affiliations>
</record>
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