Serveur d'exploration sur le thulium

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Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3

Identifieur interne : 000533 ( Pascal/Curation ); précédent : 000532; suivant : 000534

Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3

Auteurs : B. Q. Yao [République populaire de Chine] ; L. L. Zheng [République populaire de Chine] ; R. L. Zhou [République populaire de Chine] ; X. M. Duan [République populaire de Chine] ; Y. J. Zhang [République populaire de Chine] ; Y. L. Ju [République populaire de Chine] ; Y. Z. Wang [République populaire de Chine] ; G. J. Zhao [République populaire de Chine] ; Q. Dong [République populaire de Chine]

Source :

RBID : Pascal:09-0127514

Descripteurs français

English descriptors

Abstract

-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.
pA  
A01 01  1    @0 1054-660X
A03   1    @0 Laser phys.
A05       @2 18
A06       @2 12
A08 01  1  ENG  @1 Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3
A11 01  1    @1 YAO (B. Q.)
A11 02  1    @1 ZHENG (L. L.)
A11 03  1    @1 ZHOU (R. L.)
A11 04  1    @1 DUAN (X. M.)
A11 05  1    @1 ZHANG (Y. J.)
A11 06  1    @1 JU (Y. L.)
A11 07  1    @1 WANG (Y. Z.)
A11 08  1    @1 ZHAO (G. J.)
A11 09  1    @1 DONG (Q.)
A14 01      @1 National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology @2 Harbin, 150001 @3 CHN @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut. @Z 6 aut. @Z 7 aut. @Z 9 aut.
A14 02      @1 R&D Center for Laser and Opto-Electronic Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences @2 Shanghai, 201800 @3 CHN @Z 8 aut.
A20       @1 1501-1504
A21       @1 2008
A23 01      @0 ENG
A43 01      @1 INIST @2 26554 @5 354000184170800160
A44       @0 0000 @1 © 2009 INIST-CNRS. All rights reserved.
A45       @0 15 ref.
A47 01  1    @0 09-0127514
A60       @1 P
A61       @0 A
A64 01  1    @0 Laser physics
A66 01      @0 USA
C01 01    ENG  @0 -We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.
C02 01  3    @0 001B40B55R
C02 02  3    @0 001B40B60P
C03 01  3  FRE  @0 Pompage par extrémité @5 03
C03 01  3  ENG  @0 End pumping @5 03
C03 02  3  FRE  @0 Pompage par laser @5 05
C03 02  3  ENG  @0 Laser pumping @5 05
C03 03  3  FRE  @0 Laser continu @5 11
C03 03  3  ENG  @0 CW lasers @5 11
C03 04  3  FRE  @0 Laser solide @5 12
C03 04  3  ENG  @0 Solid state lasers @5 12
C03 05  3  FRE  @0 Température ambiante @5 41
C03 05  3  ENG  @0 Ambient temperature @5 41
C03 06  3  FRE  @0 Polarisation rectiligne @5 42
C03 06  3  ENG  @0 Linear polarization @5 42
C03 07  3  FRE  @0 Composé ternaire @5 50
C03 07  3  ENG  @0 Ternary compounds @5 50
C03 08  3  FRE  @0 Matériau dopé @5 51
C03 08  3  ENG  @0 Doped materials @5 51
C03 09  3  FRE  @0 Addition holmium @5 57
C03 09  3  ENG  @0 Holmium additions @5 57
C03 10  X  FRE  @0 Puissance sortie @5 61
C03 10  X  ENG  @0 Output power @5 61
C03 10  X  SPA  @0 Potencia salida @5 61
C03 11  3  FRE  @0 YAlO3 @4 INC @5 71
C03 12  3  FRE  @0 Al O Y @4 INC @5 75
C03 13  3  FRE  @0 4260P @4 INC @5 83
C03 14  3  FRE  @0 4255R @4 INC @5 84
N21       @1 089

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Pascal:09-0127514

Le document en format XML

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<title xml:lang="en" level="a">Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO
<sub>3</sub>
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<series>
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<keywords scheme="KwdEn" xml:lang="en">
<term>Ambient temperature</term>
<term>CW lasers</term>
<term>Doped materials</term>
<term>End pumping</term>
<term>Holmium additions</term>
<term>Laser pumping</term>
<term>Linear polarization</term>
<term>Output power</term>
<term>Solid state lasers</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Pompage par extrémité</term>
<term>Pompage par laser</term>
<term>Laser continu</term>
<term>Laser solide</term>
<term>Température ambiante</term>
<term>Polarisation rectiligne</term>
<term>Composé ternaire</term>
<term>Matériau dopé</term>
<term>Addition holmium</term>
<term>Puissance sortie</term>
<term>YAlO3</term>
<term>Al O Y</term>
<term>4260P</term>
<term>4255R</term>
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<front>
<div type="abstract" xml:lang="en">-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO
<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho
<sup>3+</sup>
-doped 20-mm-long YAlO
<sub>3</sub>
crystal (b cut), the Ho:YAlO
<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</div>
</front>
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<s1>Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO
<sub>3</sub>
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<fA11 i1="09" i2="1">
<s1>DONG (Q.)</s1>
</fA11>
<fA14 i1="01">
<s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1>
<s2>Harbin, 150001</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>R&D Center for Laser and Opto-Electronic Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1>
<s2>Shanghai, 201800</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
</fA14>
<fA20>
<s1>1501-1504</s1>
</fA20>
<fA21>
<s1>2008</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>26554</s2>
<s5>354000184170800160</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>09-0127514</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Laser physics</s0>
</fA64>
<fA66 i1="01">
<s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO
<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho
<sup>3+</sup>
-doped 20-mm-long YAlO
<sub>3</sub>
crystal (b cut), the Ho:YAlO
<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B40B55R</s0>
</fC02>
<fC02 i1="02" i2="3">
<s0>001B40B60P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Pompage par extrémité</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>End pumping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Pompage par laser</s0>
<s5>05</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Laser pumping</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Laser continu</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>CW lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Laser solide</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Solid state lasers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Température ambiante</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Ambient temperature</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Polarisation rectiligne</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Linear polarization</s0>
<s5>42</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Matériau dopé</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Doped materials</s0>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Addition holmium</s0>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Holmium additions</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE">
<s0>Puissance sortie</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Output power</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA">
<s0>Potencia salida</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>YAlO3</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Al O Y</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>4260P</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>4255R</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21>
<s1>089</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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