Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3
Identifieur interne : 000533 ( Pascal/Corpus ); précédent : 000532; suivant : 000534Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3
Auteurs : B. Q. Yao ; L. L. Zheng ; R. L. Zhou ; X. M. Duan ; Y. J. Zhang ; Y. L. Ju ; Y. Z. Wang ; G. J. Zhao ; Q. DongSource :
- Laser physics [ 1054-660X ] ; 2008.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.
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Pour connaître la documentation sur le format Inist Standard.
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Format Inist (serveur)
NO : | PASCAL 09-0127514 INIST |
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ET : | Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO3 |
AU : | YAO (B. Q.); ZHENG (L. L.); ZHOU (R. L.); DUAN (X. M.); ZHANG (Y. J.); JU (Y. L.); WANG (Y. Z.); ZHAO (G. J.); DONG (Q.) |
AF : | National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology/Harbin, 150001/Chine (1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut., 7 aut., 9 aut.); R&D Center for Laser and Opto-Electronic Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences/Shanghai, 201800/Chine (8 aut.) |
DT : | Publication en série; Niveau analytique |
SO : | Laser physics; ISSN 1054-660X; Etats-Unis; Da. 2008; Vol. 18; No. 12; Pp. 1501-1504; Bibl. 15 ref. |
LA : | Anglais |
EA : | -We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power. |
CC : | 001B40B55R; 001B40B60P |
FD : | Pompage par extrémité; Pompage par laser; Laser continu; Laser solide; Température ambiante; Polarisation rectiligne; Composé ternaire; Matériau dopé; Addition holmium; Puissance sortie; YAlO3; Al O Y; 4260P; 4255R |
ED : | End pumping; Laser pumping; CW lasers; Solid state lasers; Ambient temperature; Linear polarization; Ternary compounds; Doped materials; Holmium additions; Output power |
SD : | Potencia salida |
LO : | INIST-26554.354000184170800160 |
ID : | 09-0127514 |
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Pascal:09-0127514Le document en format XML
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO<sub>3</sub>
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<term>Polarisation rectiligne</term>
<term>Composé ternaire</term>
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<term>Addition holmium</term>
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<front><div type="abstract" xml:lang="en">-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho<sup>3+</sup>
-doped 20-mm-long YAlO<sub>3</sub>
crystal (b cut), the Ho:YAlO<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</div>
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<fC01 i1="01" l="ENG"><s0>-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho<sup>3+</sup>
-doped 20-mm-long YAlO<sub>3</sub>
crystal (b cut), the Ho:YAlO<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</s0>
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<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Addition holmium</s0>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Holmium additions</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Output power</s0>
<s5>61</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>YAlO3</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Al O Y</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>4260P</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>4255R</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>089</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 09-0127514 INIST</NO>
<ET>Holmium Laser In-Band Pumped by a Thulium Laser in the Same Host of YAlO<sub>3</sub>
</ET>
<AU>YAO (B. Q.); ZHENG (L. L.); ZHOU (R. L.); DUAN (X. M.); ZHANG (Y. J.); JU (Y. L.); WANG (Y. Z.); ZHAO (G. J.); DONG (Q.)</AU>
<AF>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology/Harbin, 150001/Chine (1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut., 7 aut., 9 aut.); R&D Center for Laser and Opto-Electronic Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences/Shanghai, 201800/Chine (8 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Laser physics; ISSN 1054-660X; Etats-Unis; Da. 2008; Vol. 18; No. 12; Pp. 1501-1504; Bibl. 15 ref.</SO>
<LA>Anglais</LA>
<EA>-We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO<sub>3</sub>
laser that is resonantly end pumped at 1.94 μm by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho<sup>3+</sup>
-doped 20-mm-long YAlO<sub>3</sub>
crystal (b cut), the Ho:YAlO<sub>3</sub>
laser generated 1 W of linearly polarized (Ellc) output at 2118 nm and 0.55 W of Ella output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.</EA>
<CC>001B40B55R; 001B40B60P</CC>
<FD>Pompage par extrémité; Pompage par laser; Laser continu; Laser solide; Température ambiante; Polarisation rectiligne; Composé ternaire; Matériau dopé; Addition holmium; Puissance sortie; YAlO3; Al O Y; 4260P; 4255R</FD>
<ED>End pumping; Laser pumping; CW lasers; Solid state lasers; Ambient temperature; Linear polarization; Ternary compounds; Doped materials; Holmium additions; Output power</ED>
<SD>Potencia salida</SD>
<LO>INIST-26554.354000184170800160</LO>
<ID>09-0127514</ID>
</server>
</inist>
</record>
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