Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals
Identifieur interne : 001437 ( Main/Merge ); précédent : 001436; suivant : 001438Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals
Auteurs : R. Lisiecki [Pologne] ; B. Macalik [Pologne] ; G. Dominiak-Dzik [Pologne] ; P. Solarz [Pologne] ; B. Nowak [Pologne] ; W. Ryba-Romanowski [Pologne] ; J. K. Jabczynski [Pologne] ; T. Lukasiewicz [Pologne]Source :
- Applied physics. B, Lasers and optics : (Print) [ 0946-2171 ] ; 2008.
Descripteurs français
- Pascal (Inist)
- Traitement matériau, Pompage par diode, Transfert énergie excitation, Laser semiconducteur, Laser solide, Méthode Czochralski, Méthode optique, Résonance magnétique nucléaire, Traitement thermique, Largeur raie, Spectre absorption, Durée vie, Spectre IR, Spectre visible, Matériau dopé, Matériau optique, Codopage, Matériau laser, Addition thulium, Evaluation performance, Yttrium Vanadate, Addition calcium, Contamination, Hydroxyle, Croissance cristalline en phase fondue, 4270H, 4255R, 8140G, 4255X.
English descriptors
- KwdEn :
- Absorption spectra, Calcium additions, Codoping, Contamination, Crystal growth from melts, Czochralski method, Diode pumping, Doped materials, Excitation energy transfer, Heat treatments, Hydroxyl, Infrared spectra, Laser materials, Lifetime, Line widths, Material processing, Nuclear magnetic resonance, Optical materials, Optical method, Performance evaluation, Semiconductor lasers, Solid state lasers, Thulium additions, Visible spectra, Yttrium Vanadates.
Abstract
Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO4 crystals nominally pure, single doped with Tm3+ and co-doped with Tm3+ and Ca2+ were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO4 and for YVO4 containing 0.5 at. % of Tm a single-site NMR spectrum of 51V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V4+ ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the 3F4 lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH- contamination in all samples. It has been concluded that the quenching of the 3F4 emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks.
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Solarz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2</s1><s2>50422 Wroclaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50422 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Nowak, B" sort="Nowak, B" uniqKey="Nowak B" first="B." last="Nowak">B. Nowak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2</s1><s2>50422 Wroclaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50422 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Ryba Romanowski, W" sort="Ryba Romanowski, W" uniqKey="Ryba Romanowski W" first="W." last="Ryba-Romanowski">W. Ryba-Romanowski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2</s1><s2>50422 Wroclaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50422 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Jabczynski, J K" sort="Jabczynski, J K" uniqKey="Jabczynski J" first="J. K." last="Jabczynski">J. K. Jabczynski</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Optoelectronics, Wolczyńska 133</s1><s2>01-919 Warsaw</s2><s3>POL</s3><sZ>7 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>01-919 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Lukasiewicz, T" sort="Lukasiewicz, T" uniqKey="Lukasiewicz T" first="T." last="Lukasiewicz">T. Lukasiewicz</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Electronic Materials Technology, Gen. S. Kaliskiego 2</s1><s2>00-908 Warsaw</s2><s3>POL</s3><sZ>8 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-908 Warsaw</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Applied physics. B, Lasers and optics : (Print)</title><title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title><idno type="ISSN">0946-2171</idno><imprint><date when="2008">2008</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Applied physics. B, Lasers and optics : (Print)</title><title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title><idno type="ISSN">0946-2171</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Calcium additions</term><term>Codoping</term><term>Contamination</term><term>Crystal growth from melts</term><term>Czochralski method</term><term>Diode pumping</term><term>Doped materials</term><term>Excitation energy transfer</term><term>Heat treatments</term><term>Hydroxyl</term><term>Infrared spectra</term><term>Laser materials</term><term>Lifetime</term><term>Line widths</term><term>Material processing</term><term>Nuclear magnetic resonance</term><term>Optical materials</term><term>Optical method</term><term>Performance evaluation</term><term>Semiconductor lasers</term><term>Solid state lasers</term><term>Thulium additions</term><term>Visible spectra</term><term>Yttrium Vanadates</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement matériau</term><term>Pompage par diode</term><term>Transfert énergie excitation</term><term>Laser semiconducteur</term><term>Laser solide</term><term>Méthode Czochralski</term><term>Méthode optique</term><term>Résonance magnétique nucléaire</term><term>Traitement thermique</term><term>Largeur raie</term><term>Spectre absorption</term><term>Durée vie</term><term>Spectre IR</term><term>Spectre visible</term><term>Matériau dopé</term><term>Matériau optique</term><term>Codopage</term><term>Matériau laser</term><term>Addition thulium</term><term>Evaluation performance</term><term>Yttrium Vanadate</term><term>Addition calcium</term><term>Contamination</term><term>Hydroxyle</term><term>Croissance cristalline en phase fondue</term><term>4270H</term><term>4255R</term><term>8140G</term><term>4255X</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO<sub>4</sub> crystals nominally pure, single doped with Tm<sup>3+</sup> and co-doped with Tm<sup>3+</sup> and Ca<sup>2+</sup> were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO<sub>4</sub> and for YVO<sub>4</sub> containing 0.5 at. % of Tm a single-site NMR spectrum of <sup>51</sup>V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V<sup>4+</sup> ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the <sup>3</sup>F<sub>4</sub> lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH<sup>-</sup> contamination in all samples. It has been concluded that the quenching of the <sup>3</sup>F<sub>4</sub> emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks.</div></front></TEI><affiliations><list><country><li>Pologne</li></country></list><tree><country name="Pologne"><noRegion><name sortKey="Lisiecki, R" sort="Lisiecki, R" uniqKey="Lisiecki R" first="R." last="Lisiecki">R. Lisiecki</name></noRegion><name sortKey="Dominiak Dzik, G" sort="Dominiak Dzik, G" uniqKey="Dominiak Dzik G" first="G." last="Dominiak-Dzik">G. Dominiak-Dzik</name><name sortKey="Jabczynski, J K" sort="Jabczynski, J K" uniqKey="Jabczynski J" first="J. K." last="Jabczynski">J. K. Jabczynski</name><name sortKey="Lukasiewicz, T" sort="Lukasiewicz, T" uniqKey="Lukasiewicz T" first="T." last="Lukasiewicz">T. Lukasiewicz</name><name sortKey="Macalik, B" sort="Macalik, B" uniqKey="Macalik B" first="B." last="Macalik">B. Macalik</name><name sortKey="Nowak, B" sort="Nowak, B" uniqKey="Nowak B" first="B." last="Nowak">B. Nowak</name><name sortKey="Ryba Romanowski, W" sort="Ryba Romanowski, W" uniqKey="Ryba Romanowski W" first="W." last="Ryba-Romanowski">W. Ryba-Romanowski</name><name sortKey="Solarz, P" sort="Solarz, P" uniqKey="Solarz P" first="P." last="Solarz">P. Solarz</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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