Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals
Identifieur interne : 000682 ( Pascal/Corpus ); précédent : 000681; suivant : 000683Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals
Auteurs : R. Lisiecki ; B. Macalik ; G. Dominiak-Dzik ; P. Solarz ; B. Nowak ; W. Ryba-Romanowski ; J. K. Jabczynski ; T. LukasiewiczSource :
- Applied physics. B, Lasers and optics : (Print) [ 0946-2171 ] ; 2008.
Descripteurs français
- Pascal (Inist)
- Traitement matériau, Pompage par diode, Transfert énergie excitation, Laser semiconducteur, Laser solide, Méthode Czochralski, Méthode optique, Résonance magnétique nucléaire, Traitement thermique, Largeur raie, Spectre absorption, Durée vie, Spectre IR, Spectre visible, Matériau dopé, Matériau optique, Codopage, Matériau laser, Addition thulium, Evaluation performance, Yttrium Vanadate, Addition calcium, Contamination, Hydroxyle, Croissance cristalline en phase fondue, 4270H, 4255R, 8140G, 4255X.
English descriptors
- KwdEn :
- Absorption spectra, Calcium additions, Codoping, Contamination, Crystal growth from melts, Czochralski method, Diode pumping, Doped materials, Excitation energy transfer, Heat treatments, Hydroxyl, Infrared spectra, Laser materials, Lifetime, Line widths, Material processing, Nuclear magnetic resonance, Optical materials, Optical method, Performance evaluation, Semiconductor lasers, Solid state lasers, Thulium additions, Visible spectra, Yttrium Vanadates.
Abstract
Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO4 crystals nominally pure, single doped with Tm3+ and co-doped with Tm3+ and Ca2+ were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO4 and for YVO4 containing 0.5 at. % of Tm a single-site NMR spectrum of 51V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V4+ ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the 3F4 lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH- contamination in all samples. It has been concluded that the quenching of the 3F4 emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks.
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Pour connaître la documentation sur le format Inist Standard.
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Format Inist (serveur)
NO : | PASCAL 08-0151929 INIST |
---|---|
ET : | Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals |
AU : | LISIECKI (R.); MACALIK (B.); DOMINIAK-DZIK (G.); SOLARZ (P.); NOWAK (B.); RYBA-ROMANOWSKI (W.); JABCZYNSKI (J. K.); LUKASIEWICZ (T.) |
AF : | Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2/50422 Wroclaw/Pologne (1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut.); Institute of Optoelectronics, Wolczyńska 133/01-919 Warsaw/Pologne (7 aut.); Institute of Electronic Materials Technology, Gen. S. Kaliskiego 2/00-908 Warsaw/Pologne (8 aut.) |
DT : | Publication en série; Niveau analytique |
SO : | Applied physics. B, Lasers and optics : (Print); ISSN 0946-2171; Allemagne; Da. 2008; Vol. 90; No. 3-4; Pp. 477-483; Bibl. 14 ref. |
LA : | Anglais |
EA : | Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO4 crystals nominally pure, single doped with Tm3+ and co-doped with Tm3+ and Ca2+ were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO4 and for YVO4 containing 0.5 at. % of Tm a single-site NMR spectrum of 51V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V4+ ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the 3F4 lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH- contamination in all samples. It has been concluded that the quenching of the 3F4 emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks. |
CC : | 001B40B70H; 001B40B55X; 001B40B55R; 001B80A40G |
FD : | Traitement matériau; Pompage par diode; Transfert énergie excitation; Laser semiconducteur; Laser solide; Méthode Czochralski; Méthode optique; Résonance magnétique nucléaire; Traitement thermique; Largeur raie; Spectre absorption; Durée vie; Spectre IR; Spectre visible; Matériau dopé; Matériau optique; Codopage; Matériau laser; Addition thulium; Evaluation performance; Yttrium Vanadate; Addition calcium; Contamination; Hydroxyle; Croissance cristalline en phase fondue; 4270H; 4255R; 8140G; 4255X |
ED : | Material processing; Diode pumping; Excitation energy transfer; Semiconductor lasers; Solid state lasers; Czochralski method; Optical method; Nuclear magnetic resonance; Heat treatments; Line widths; Absorption spectra; Lifetime; Infrared spectra; Visible spectra; Doped materials; Optical materials; Codoping; Laser materials; Thulium additions; Performance evaluation; Yttrium Vanadates; Calcium additions; Contamination; Hydroxyl; Crystal growth from melts |
SD : | Tratamiento material; Bombeo por diodo; Transferencia energía excitación; Método óptico; Codrogado; Hidroxilo |
LO : | INIST-16194B.354000175142180210 |
ID : | 08-0151929 |
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Pascal:08-0151929Le document en format XML
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<term>Czochralski method</term>
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<term>Excitation energy transfer</term>
<term>Heat treatments</term>
<term>Hydroxyl</term>
<term>Infrared spectra</term>
<term>Laser materials</term>
<term>Lifetime</term>
<term>Line widths</term>
<term>Material processing</term>
<term>Nuclear magnetic resonance</term>
<term>Optical materials</term>
<term>Optical method</term>
<term>Performance evaluation</term>
<term>Semiconductor lasers</term>
<term>Solid state lasers</term>
<term>Thulium additions</term>
<term>Visible spectra</term>
<term>Yttrium Vanadates</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Traitement matériau</term>
<term>Pompage par diode</term>
<term>Transfert énergie excitation</term>
<term>Laser semiconducteur</term>
<term>Laser solide</term>
<term>Méthode Czochralski</term>
<term>Méthode optique</term>
<term>Résonance magnétique nucléaire</term>
<term>Traitement thermique</term>
<term>Largeur raie</term>
<term>Spectre absorption</term>
<term>Durée vie</term>
<term>Spectre IR</term>
<term>Spectre visible</term>
<term>Matériau dopé</term>
<term>Matériau optique</term>
<term>Codopage</term>
<term>Matériau laser</term>
<term>Addition thulium</term>
<term>Evaluation performance</term>
<term>Yttrium Vanadate</term>
<term>Addition calcium</term>
<term>Contamination</term>
<term>Hydroxyle</term>
<term>Croissance cristalline en phase fondue</term>
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<term>4255R</term>
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<front><div type="abstract" xml:lang="en">Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO<sub>4</sub>
crystals nominally pure, single doped with Tm<sup>3+</sup>
and co-doped with Tm<sup>3+</sup>
and Ca<sup>2+</sup>
were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO<sub>4</sub>
and for YVO<sub>4</sub>
containing 0.5 at. % of Tm a single-site NMR spectrum of <sup>51</sup>
V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V<sup>4+</sup>
ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the <sup>3</sup>
F<sub>4</sub>
lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH<sup>-</sup>
contamination in all samples. It has been concluded that the quenching of the <sup>3</sup>
F<sub>4</sub>
emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks.</div>
</front>
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<fC01 i1="01" l="ENG"><s0>Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO<sub>4</sub>
crystals nominally pure, single doped with Tm<sup>3+</sup>
and co-doped with Tm<sup>3+</sup>
and Ca<sup>2+</sup>
were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO<sub>4</sub>
and for YVO<sub>4</sub>
containing 0.5 at. % of Tm a single-site NMR spectrum of <sup>51</sup>
V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V<sup>4+</sup>
ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the <sup>3</sup>
F<sub>4</sub>
lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH<sup>-</sup>
contamination in all samples. It has been concluded that the quenching of the <sup>3</sup>
F<sub>4</sub>
emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B70H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B55X</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B55R</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A40G</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Traitement matériau</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Material processing</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Tratamiento material</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Pompage par diode</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Diode pumping</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Bombeo por diodo</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Transfert énergie excitation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Excitation energy transfer</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Transferencia energía excitación</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Laser solide</s0>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Solid state lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Méthode Czochralski</s0>
<s5>30</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Czochralski method</s0>
<s5>30</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Méthode optique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Optical method</s0>
<s5>31</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Método óptico</s0>
<s5>31</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Résonance magnétique nucléaire</s0>
<s5>32</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Nuclear magnetic resonance</s0>
<s5>32</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>33</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Heat treatments</s0>
<s5>33</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Largeur raie</s0>
<s5>41</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Line widths</s0>
<s5>41</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>42</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>42</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Durée vie</s0>
<s5>43</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Lifetime</s0>
<s5>43</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Spectre IR</s0>
<s5>44</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Infrared spectra</s0>
<s5>44</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Spectre visible</s0>
<s5>45</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Visible spectra</s0>
<s5>45</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>50</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>50</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>51</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>51</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Codopage</s0>
<s5>57</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Codoping</s0>
<s5>57</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Codrogado</s0>
<s5>57</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Matériau laser</s0>
<s5>58</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Laser materials</s0>
<s5>58</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>61</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>61</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Evaluation performance</s0>
<s5>62</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Performance evaluation</s0>
<s5>62</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Yttrium Vanadate</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>63</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Yttrium Vanadates</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>63</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Addition calcium</s0>
<s5>65</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Calcium additions</s0>
<s5>65</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Contamination</s0>
<s5>66</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Contamination</s0>
<s5>66</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Hydroxyle</s0>
<s5>67</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Hydroxyl</s0>
<s5>67</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Hidroxilo</s0>
<s5>67</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Croissance cristalline en phase fondue</s0>
<s5>68</s5>
</fC03>
<fC03 i1="25" i2="3" l="ENG"><s0>Crystal growth from melts</s0>
<s5>68</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>4270H</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>4255R</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>8140G</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>4255X</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>091</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 08-0151929 INIST</NO>
<ET>Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals</ET>
<AU>LISIECKI (R.); MACALIK (B.); DOMINIAK-DZIK (G.); SOLARZ (P.); NOWAK (B.); RYBA-ROMANOWSKI (W.); JABCZYNSKI (J. K.); LUKASIEWICZ (T.)</AU>
<AF>Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2/50422 Wroclaw/Pologne (1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut.); Institute of Optoelectronics, Wolczyńska 133/01-919 Warsaw/Pologne (7 aut.); Institute of Electronic Materials Technology, Gen. S. Kaliskiego 2/00-908 Warsaw/Pologne (8 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Applied physics. B, Lasers and optics : (Print); ISSN 0946-2171; Allemagne; Da. 2008; Vol. 90; No. 3-4; Pp. 477-483; Bibl. 14 ref.</SO>
<LA>Anglais</LA>
<EA>Influence of impurities and thermal treatment on spectroscopic properties and laser performance of thulium-doped yttrium vanadate crystals was examined. YVO<sub>4</sub>
crystals nominally pure, single doped with Tm<sup>3+</sup>
and co-doped with Tm<sup>3+</sup>
and Ca<sup>2+</sup>
were grown by the Czochralski method and then thermally treated at 1150 °C for several hours in a reducing atmosphere (vacuum) or oxidizing atmosphere (air). Samples of crystals were investigated by nuclear magnetic resonance spectroscopy (NMR) and by optical spectroscopy methods. Laser performance of samples was examined upon laser diode pumping. For pure YVO<sub>4</sub>
and for YVO<sub>4</sub>
containing 0.5 at. % of Tm a single-site NMR spectrum of <sup>51</sup>
V nuclei was observed with central line widths of 2.5 and 3.2 kHz (FWHM), respectively. For samples containing 5 at. % of Tm the NMR spectrum was a superposition of multi-site spectra indicating at least three kinds of vanadium sites with axial symmetry. Optical absorption spectra did not contain bands that could be ascribed to V<sup>4+</sup>
ions in tetragonal sites. Level of matrix absorption in the visible region and its increase with decreasing wavelength from about 600 to 370 nm was found to be substantially dependent on conditions of thermal treatment. Thermal treatment of crystals and additional doping with Ca did not influence the <sup>3</sup>
F<sub>4</sub>
lifetime of thulium and laser performance of crystals, however. Infrared absorption spectra revealed OH<sup>-</sup>
contamination in all samples. It has been concluded that the quenching of the <sup>3</sup>
F<sub>4</sub>
emission in samples containing 5 at. % of thulium is related to migration-accelerated energy transfer to hydroxyl ions acting as energy sinks.</EA>
<CC>001B40B70H; 001B40B55X; 001B40B55R; 001B80A40G</CC>
<FD>Traitement matériau; Pompage par diode; Transfert énergie excitation; Laser semiconducteur; Laser solide; Méthode Czochralski; Méthode optique; Résonance magnétique nucléaire; Traitement thermique; Largeur raie; Spectre absorption; Durée vie; Spectre IR; Spectre visible; Matériau dopé; Matériau optique; Codopage; Matériau laser; Addition thulium; Evaluation performance; Yttrium Vanadate; Addition calcium; Contamination; Hydroxyle; Croissance cristalline en phase fondue; 4270H; 4255R; 8140G; 4255X</FD>
<ED>Material processing; Diode pumping; Excitation energy transfer; Semiconductor lasers; Solid state lasers; Czochralski method; Optical method; Nuclear magnetic resonance; Heat treatments; Line widths; Absorption spectra; Lifetime; Infrared spectra; Visible spectra; Doped materials; Optical materials; Codoping; Laser materials; Thulium additions; Performance evaluation; Yttrium Vanadates; Calcium additions; Contamination; Hydroxyl; Crystal growth from melts</ED>
<SD>Tratamiento material; Bombeo por diodo; Transferencia energía excitación; Método óptico; Codrogado; Hidroxilo</SD>
<LO>INIST-16194B.354000175142180210</LO>
<ID>08-0151929</ID>
</server>
</inist>
</record>
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