Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals
Identifieur interne : 001B49 ( Main/Exploration ); précédent : 001B48; suivant : 001B50Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals
Auteurs : M. Higuchi [Japon] ; K. Kodaira [Japon] ; Y. Urata [Japon] ; S. Wada [Japon] ; H. Machida [Japon]Source :
- Journal of crystal growth [ 0022-0248 ] ; 2004.
Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase fondue, Zone flottante, Dopage, Addition thulium, Effet concentration, Joint grain, Inclusion, Taux croissance, Coefficient absorption, Autoabsorption, Photoluminescence, Monocristal, Gadolinium oxyde, Vanadium oxyde, Composé ternaire, GdVO4, Gd O V, 8110F.
- Wicri :
- topic : Dopage.
English descriptors
- KwdEn :
Abstract
Heavily Tm-doped (5-20 at%) GdVO4 single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.
Affiliations:
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Le document en format XML
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Float zone growth and spectroscopic characterization of Tm:GdVO<sub>4</sub>
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<author><name sortKey="Higuchi, M" sort="Higuchi, M" uniqKey="Higuchi M" first="M." last="Higuchi">M. Higuchi</name>
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<author><name sortKey="Kodaira, K" sort="Kodaira, K" uniqKey="Kodaira K" first="K." last="Kodaira">K. Kodaira</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Engineering, Hokkaido University</s1>
<s2>Kita-ku, Sapporo 060-8628</s2>
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<author><name sortKey="Wada, S" sort="Wada, S" uniqKey="Wada S" first="S." last="Wada">S. Wada</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>The Institute of Physical and Chemical Research (RIKEN)</s1>
<s2>2-1 Hirosawa, Wako 351-0198</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
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<author><name sortKey="Machida, H" sort="Machida, H" uniqKey="Machida H" first="H." last="Machida">H. Machida</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Tokin Corporation</s1>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term>
<term>Crystal growth from melts</term>
<term>Doping</term>
<term>Experimental study</term>
<term>Floating zone</term>
<term>Gadolinium oxides</term>
<term>Grain boundaries</term>
<term>Growth rate</term>
<term>Inclusions</term>
<term>Monocrystals</term>
<term>Photoluminescence</term>
<term>Quantity ratio</term>
<term>Self-absorption</term>
<term>Ternary compounds</term>
<term>Thulium additions</term>
<term>Vanadium oxides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase fondue</term>
<term>Zone flottante</term>
<term>Dopage</term>
<term>Addition thulium</term>
<term>Effet concentration</term>
<term>Joint grain</term>
<term>Inclusion</term>
<term>Taux croissance</term>
<term>Coefficient absorption</term>
<term>Autoabsorption</term>
<term>Photoluminescence</term>
<term>Monocristal</term>
<term>Gadolinium oxyde</term>
<term>Vanadium oxyde</term>
<term>Composé ternaire</term>
<term>GdVO4</term>
<term>Gd O V</term>
<term>8110F</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Dopage</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Heavily Tm-doped (5-20 at%) GdVO<sub>4</sub>
single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.</div>
</front>
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<affiliations><list><country><li>Japon</li>
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<tree><country name="Japon"><noRegion><name sortKey="Higuchi, M" sort="Higuchi, M" uniqKey="Higuchi M" first="M." last="Higuchi">M. Higuchi</name>
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<name sortKey="Kodaira, K" sort="Kodaira, K" uniqKey="Kodaira K" first="K." last="Kodaira">K. Kodaira</name>
<name sortKey="Machida, H" sort="Machida, H" uniqKey="Machida H" first="H." last="Machida">H. Machida</name>
<name sortKey="Urata, Y" sort="Urata, Y" uniqKey="Urata Y" first="Y." last="Urata">Y. Urata</name>
<name sortKey="Wada, S" sort="Wada, S" uniqKey="Wada S" first="S." last="Wada">S. Wada</name>
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