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Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Identifieur interne : 001C13 ( Main/Merge ); précédent : 001C12; suivant : 001C14

Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Auteurs : M. Higuchi [Japon] ; K. Kodaira [Japon] ; Y. Urata [Japon] ; S. Wada [Japon] ; H. Machida [Japon]

Source :

Journal of crystal growth [ 0022-0248 ] ; 2004.

RBID : Pascal:04-0437434

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase fondue, Zone flottante, Dopage, Addition thulium, Effet concentration, Joint grain, Inclusion, Taux croissance, Coefficient absorption, Autoabsorption, Photoluminescence, Monocristal, Gadolinium oxyde, Vanadium oxyde, Composé ternaire, GdVO4, Gd O V, 8110F.
Wicri :
- topic : Dopage.

English descriptors

KwdEn :
- Absorption coefficients, Crystal growth from melts, Doping, Experimental study, Floating zone, Gadolinium oxides, Grain boundaries, Growth rate, Inclusions, Monocrystals, Photoluminescence, Quantity ratio, Self-absorption, Ternary compounds, Thulium additions, Vanadium oxides.

Abstract

Heavily Tm-doped (5-20 at%) GdVO₄ single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.

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Pascal:04-0437434

Le document en format XML

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 single crystals</title>
<author><name sortKey="Higuchi, M" sort="Higuchi, M" uniqKey="Higuchi M" first="M." last="Higuchi">M. Higuchi</name>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Float zone growth and spectroscopic characterization of Tm:GdVO<sub>4</sub>
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<author><name sortKey="Kodaira, K" sort="Kodaira, K" uniqKey="Kodaira K" first="K." last="Kodaira">K. Kodaira</name>
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<author><name sortKey="Machida, H" sort="Machida, H" uniqKey="Machida H" first="H." last="Machida">H. Machida</name>
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<term>Experimental study</term>
<term>Floating zone</term>
<term>Gadolinium oxides</term>
<term>Grain boundaries</term>
<term>Growth rate</term>
<term>Inclusions</term>
<term>Monocrystals</term>
<term>Photoluminescence</term>
<term>Quantity ratio</term>
<term>Self-absorption</term>
<term>Ternary compounds</term>
<term>Thulium additions</term>
<term>Vanadium oxides</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase fondue</term>
<term>Zone flottante</term>
<term>Dopage</term>
<term>Addition thulium</term>
<term>Effet concentration</term>
<term>Joint grain</term>
<term>Inclusion</term>
<term>Taux croissance</term>
<term>Coefficient absorption</term>
<term>Autoabsorption</term>
<term>Photoluminescence</term>
<term>Monocristal</term>
<term>Gadolinium oxyde</term>
<term>Vanadium oxyde</term>
<term>Composé ternaire</term>
<term>GdVO4</term>
<term>Gd O V</term>
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<front><div type="abstract" xml:lang="en">Heavily Tm-doped (5-20 at%) GdVO<sub>4</sub>
 single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.</div>
</front>
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<tree><country name="Japon"><noRegion><name sortKey="Higuchi, M" sort="Higuchi, M" uniqKey="Higuchi M" first="M." last="Higuchi">M. Higuchi</name>
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<name sortKey="Machida, H" sort="Machida, H" uniqKey="Machida H" first="H." last="Machida">H. Machida</name>
<name sortKey="Urata, Y" sort="Urata, Y" uniqKey="Urata Y" first="Y." last="Urata">Y. Urata</name>
<name sortKey="Wada, S" sort="Wada, S" uniqKey="Wada S" first="S." last="Wada">S. Wada</name>
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Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri