ThuliumV1, Pascal, Corpus, bibRecord, 000A23

Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Identifieur interne : 000A23 ( Pascal/Corpus ); précédent : 000A22; suivant : 000A24

Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Auteurs : M. Higuchi ; K. Kodaira ; Y. Urata ; S. Wada ; H. Machida

Source :

Journal of crystal growth [ 0022-0248 ] ; 2004.

RBID : Pascal:04-0437434

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase fondue, Zone flottante, Dopage, Addition thulium, Effet concentration, Joint grain, Inclusion, Taux croissance, Coefficient absorption, Autoabsorption, Photoluminescence, Monocristal, Gadolinium oxyde, Vanadium oxyde, Composé ternaire, GdVO4, Gd O V, 8110F.

English descriptors

KwdEn :
- Absorption coefficients, Crystal growth from melts, Doping, Experimental study, Floating zone, Gadolinium oxides, Grain boundaries, Growth rate, Inclusions, Monocrystals, Photoluminescence, Quantity ratio, Self-absorption, Ternary compounds, Thulium additions, Vanadium oxides.

Abstract

Heavily Tm-doped (5-20 at%) GdVO₄ single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0022-0248`
A02	`01`			`@0 JCRGAE`
A03		`1`		`@0 J. cryst. growth`
A05				`@2 265`
A06				`@2 3-4`
A08	`01`	`1`	`ENG`	`@1 Float zone growth and spectroscopic characterization of Tm:GdVO₄ single crystals`
A11	`01`	`1`		`@1 HIGUCHI (M.)`
A11	`02`	`1`		`@1 KODAIRA (K.)`
A11	`03`	`1`		`@1 URATA (Y.)`
A11	`04`	`1`		`@1 WADA (S.)`
A11	`05`	`1`		`@1 MACHIDA (H.)`
A14	`01`			`@1 Graduate School of Engineering, Hokkaido University @2 Kita-ku, Sapporo 060-8628 @3 JPN @Z 1 aut. @Z 2 aut.`
A14	`02`			`@1 Megaopto Co. Ltd., 11-58-307 Honcho @2 Wako, Saitama 351-0114 @3 JPN @Z 3 aut.`
A14	`03`			`@1 The Institute of Physical and Chemical Research (RIKEN) @2 2-1 Hirosawa, Wako 351-0198 @3 JPN @Z 4 aut.`
A14	`04`			`@1 Tokin Corporation @2 28-1 Hanashimashinden, Tsukuba 305-0875 @3 JPN @Z 5 aut.`
A20				`@1 487-493`
A21				`@1 2004`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 13507 @5 354000117109940210`
A44				`@0 0000 @1 © 2004 INIST-CNRS. All rights reserved.`
A45				`@0 17 ref.`
A47	`01`	`1`		`@0 04-0437434`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of crystal growth`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	@0 Heavily Tm-doped (5-20 at%) GdVO₄ single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.
C02	`01`	`3`		`@0 001B80A10F`
C03	`01`	`3`	`FRE`	`@0 Etude expérimentale @5 02`
C03	`01`	`3`	`ENG`	`@0 Experimental study @5 02`
C03	`02`	`3`	`FRE`	`@0 Croissance cristalline en phase fondue @5 03`
C03	`02`	`3`	`ENG`	`@0 Crystal growth from melts @5 03`
C03	`03`	`X`	`FRE`	`@0 Zone flottante @5 04`
C03	`03`	`X`	`ENG`	`@0 Floating zone @5 04`
C03	`03`	`X`	`SPA`	`@0 Zona flotante @5 04`
C03	`04`	`X`	`FRE`	`@0 Dopage @5 05`
C03	`04`	`X`	`ENG`	`@0 Doping @5 05`
C03	`04`	`X`	`SPA`	`@0 Doping @5 05`
C03	`05`	`3`	`FRE`	`@0 Addition thulium @5 06`
C03	`05`	`3`	`ENG`	`@0 Thulium additions @5 06`
C03	`06`	`3`	`FRE`	`@0 Effet concentration @5 07`
C03	`06`	`3`	`ENG`	`@0 Quantity ratio @5 07`
C03	`07`	`3`	`FRE`	`@0 Joint grain @5 08`
C03	`07`	`3`	`ENG`	`@0 Grain boundaries @5 08`
C03	`08`	`3`	`FRE`	`@0 Inclusion @5 09`
C03	`08`	`3`	`ENG`	`@0 Inclusions @5 09`
C03	`09`	`3`	`FRE`	`@0 Taux croissance @5 10`
C03	`09`	`3`	`ENG`	`@0 Growth rate @5 10`
C03	`10`	`3`	`FRE`	`@0 Coefficient absorption @5 11`
C03	`10`	`3`	`ENG`	`@0 Absorption coefficients @5 11`
C03	`11`	`3`	`FRE`	`@0 Autoabsorption @5 12`
C03	`11`	`3`	`ENG`	`@0 Self-absorption @5 12`
C03	`12`	`3`	`FRE`	`@0 Photoluminescence @5 13`
C03	`12`	`3`	`ENG`	`@0 Photoluminescence @5 13`
C03	`13`	`3`	`FRE`	`@0 Monocristal @5 15`
C03	`13`	`3`	`ENG`	`@0 Monocrystals @5 15`
C03	`14`	`3`	`FRE`	`@0 Gadolinium oxyde @2 NK @5 16`
C03	`14`	`3`	`ENG`	`@0 Gadolinium oxides @2 NK @5 16`
C03	`15`	`3`	`FRE`	`@0 Vanadium oxyde @2 NK @5 17`
C03	`15`	`3`	`ENG`	`@0 Vanadium oxides @2 NK @5 17`
C03	`16`	`3`	`FRE`	`@0 Composé ternaire @5 18`
C03	`16`	`3`	`ENG`	`@0 Ternary compounds @5 18`
C03	`17`	`3`	`FRE`	`@0 GdVO4 @4 INC @5 52`
C03	`18`	`3`	`FRE`	`@0 Gd O V @4 INC @5 53`
C03	`19`	`3`	`FRE`	`@0 8110F @2 PAC @4 INC @5 56`
C07	`01`	`3`	`FRE`	`@0 Composé minéral @5 48`
C07	`01`	`3`	`ENG`	`@0 Inorganic compounds @5 48`
C07	`02`	`3`	`FRE`	`@0 Métal transition composé @5 49`
C07	`02`	`3`	`ENG`	`@0 Transition element compounds @5 49`
C07	`03`	`3`	`FRE`	`@0 Lanthanide composé @5 50`
C07	`03`	`3`	`ENG`	`@0 Rare earth compounds @5 50`
N21				`@1 243`
N44	`01`			`@1 PSI`
N82				`@1 PSI`

Format Inist (serveur)

NO :	PASCAL 04-0437434 INIST
ET :	Float zone growth and spectroscopic characterization of Tm:GdVO₄ single crystals
AU :	HIGUCHI (M.); KODAIRA (K.); URATA (Y.); WADA (S.); MACHIDA (H.)
AF :	Graduate School of Engineering, Hokkaido University/Kita-ku, Sapporo 060-8628/Japon (1 aut., 2 aut.); Megaopto Co. Ltd., 11-58-307 Honcho/Wako, Saitama 351-0114/Japon (3 aut.); The Institute of Physical and Chemical Research (RIKEN)/2-1 Hirosawa, Wako 351-0198/Japon (4 aut.); Tokin Corporation/28-1 Hanashimashinden, Tsukuba 305-0875/Japon (5 aut.)
DT :	Publication en série; Niveau analytique
SO :	Journal of crystal growth; ISSN 0022-0248; Coden JCRGAE; Pays-Bas; Da. 2004; Vol. 265; No. 3-4; Pp. 487-493; Bibl. 17 ref.
LA :	Anglais
EA :	Heavily Tm-doped (5-20 at%) GdVO₄ single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.
CC :	001B80A10F
FD :	Etude expérimentale; Croissance cristalline en phase fondue; Zone flottante; Dopage; Addition thulium; Effet concentration; Joint grain; Inclusion; Taux croissance; Coefficient absorption; Autoabsorption; Photoluminescence; Monocristal; Gadolinium oxyde; Vanadium oxyde; Composé ternaire; GdVO4; Gd O V; 8110F
FG :	Composé minéral; Métal transition composé; Lanthanide composé
ED :	Experimental study; Crystal growth from melts; Floating zone; Doping; Thulium additions; Quantity ratio; Grain boundaries; Inclusions; Growth rate; Absorption coefficients; Self-absorption; Photoluminescence; Monocrystals; Gadolinium oxides; Vanadium oxides; Ternary compounds
EG :	Inorganic compounds; Transition element compounds; Rare earth compounds
SD :	Zona flotante; Doping
LO :	INIST-13507.354000117109940210
ID :	04-0437434

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Pascal:04-0437434

Le document en format XML

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<author><name sortKey="Machida, H" sort="Machida, H" uniqKey="Machida H" first="H." last="Machida">H. Machida</name>
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<term>Experimental study</term>
<term>Floating zone</term>
<term>Gadolinium oxides</term>
<term>Grain boundaries</term>
<term>Growth rate</term>
<term>Inclusions</term>
<term>Monocrystals</term>
<term>Photoluminescence</term>
<term>Quantity ratio</term>
<term>Self-absorption</term>
<term>Ternary compounds</term>
<term>Thulium additions</term>
<term>Vanadium oxides</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase fondue</term>
<term>Zone flottante</term>
<term>Dopage</term>
<term>Addition thulium</term>
<term>Effet concentration</term>
<term>Joint grain</term>
<term>Inclusion</term>
<term>Taux croissance</term>
<term>Coefficient absorption</term>
<term>Autoabsorption</term>
<term>Photoluminescence</term>
<term>Monocristal</term>
<term>Gadolinium oxyde</term>
<term>Vanadium oxyde</term>
<term>Composé ternaire</term>
<term>GdVO4</term>
<term>Gd O V</term>
<term>8110F</term>
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<front><div type="abstract" xml:lang="en">Heavily Tm-doped (5-20 at%) GdVO<sub>4</sub>
 single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.</div>
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 single crystals</s1>
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<fA11 i1="01" i2="1"><s1>HIGUCHI (M.)</s1>
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<fA14 i1="01"><s1>Graduate School of Engineering, Hokkaido University</s1>
<s2>Kita-ku, Sapporo 060-8628</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Megaopto Co. Ltd., 11-58-307 Honcho</s1>
<s2>Wako, Saitama 351-0114</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>The Institute of Physical and Chemical Research (RIKEN)</s1>
<s2>2-1 Hirosawa, Wako 351-0198</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Tokin Corporation</s1>
<s2>28-1 Hanashimashinden, Tsukuba 305-0875</s2>
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<sZ>5 aut.</sZ>
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</fA47>
<fA60><s1>P</s1>
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<fC01 i1="01" l="ENG"><s0>Heavily Tm-doped (5-20 at%) GdVO<sub>4</sub>
 single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A10F</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase fondue</s0>
<s5>03</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth from melts</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Zone flottante</s0>
<s5>04</s5>
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<fC03 i1="03" i2="X" l="ENG"><s0>Floating zone</s0>
<s5>04</s5>
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<fC03 i1="03" i2="X" l="SPA"><s0>Zona flotante</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Dopage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Doping</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Doping</s0>
<s5>05</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Effet concentration</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Quantity ratio</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Joint grain</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Grain boundaries</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Inclusion</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Inclusions</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Taux croissance</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Growth rate</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Coefficient absorption</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Absorption coefficients</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Autoabsorption</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Self-absorption</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Monocristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Monocrystals</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Gadolinium oxyde</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gadolinium oxides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Vanadium oxyde</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Vanadium oxides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>GdVO4</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Gd O V</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8110F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0>
<s5>49</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0>
<s5>49</s5>
</fC07>
<fC07 i1="03" i2="3" l="FRE"><s0>Lanthanide composé</s0>
<s5>50</s5>
</fC07>
<fC07 i1="03" i2="3" l="ENG"><s0>Rare earth compounds</s0>
<s5>50</s5>
</fC07>
<fN21><s1>243</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
<server><NO>PASCAL 04-0437434 INIST</NO>
<ET>Float zone growth and spectroscopic characterization of Tm:GdVO<sub>4</sub>
 single crystals</ET>
<AU>HIGUCHI (M.); KODAIRA (K.); URATA (Y.); WADA (S.); MACHIDA (H.)</AU>
<AF>Graduate School of Engineering, Hokkaido University/Kita-ku, Sapporo 060-8628/Japon (1 aut., 2 aut.); Megaopto Co. Ltd., 11-58-307 Honcho/Wako, Saitama 351-0114/Japon (3 aut.); The Institute of Physical and Chemical Research (RIKEN)/2-1 Hirosawa, Wako 351-0198/Japon (4 aut.); Tokin Corporation/28-1 Hanashimashinden, Tsukuba 305-0875/Japon (5 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of crystal growth; ISSN 0022-0248; Coden JCRGAE; Pays-Bas; Da. 2004; Vol. 265; No. 3-4; Pp. 487-493; Bibl. 17 ref.</SO>
<LA>Anglais</LA>
<EA>Heavily Tm-doped (5-20 at%) GdVO<sub>4</sub>
 single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Low-angle grain boundary-free crystals were easily grown along the [110] direction whereas the crystals grown along the [001] direction comprised a few low-angle grain boundaries. The formation of bubble inclusions was effectively suppressed by optimizing growth rates and rotation rates. The absorption coefficient around 800 nm was large enough for pumping with a laser diode of 808 nm, which is conventionally used for Nd lasers. Intensive emission was observed even above 1950 nm where the self-absorption could be neglected. The fluorescence decay time decreased from 2.1 to 0.5 ms with increasing Tm concentration but is long enough for laser oscillation.</EA>
<CC>001B80A10F</CC>
<FD>Etude expérimentale; Croissance cristalline en phase fondue; Zone flottante; Dopage; Addition thulium; Effet concentration; Joint grain; Inclusion; Taux croissance; Coefficient absorption; Autoabsorption; Photoluminescence; Monocristal; Gadolinium oxyde; Vanadium oxyde; Composé ternaire; GdVO4; Gd O V; 8110F</FD>
<FG>Composé minéral; Métal transition composé; Lanthanide composé</FG>
<ED>Experimental study; Crystal growth from melts; Floating zone; Doping; Thulium additions; Quantity ratio; Grain boundaries; Inclusions; Growth rate; Absorption coefficients; Self-absorption; Photoluminescence; Monocrystals; Gadolinium oxides; Vanadium oxides; Ternary compounds</ED>
<EG>Inorganic compounds; Transition element compounds; Rare earth compounds</EG>
<SD>Zona flotante; Doping</SD>
<LO>INIST-13507.354000117109940210</LO>
<ID>04-0437434</ID>
</server>
</inist>
</record>

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Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals

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