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Kinetics of growth and consumption of Ni rich phases

Identifieur interne : 000415 ( PascalFrancis/Curation ); précédent : 000414; suivant : 000416

Kinetics of growth and consumption of Ni rich phases

Auteurs : G. Tellouche-Derafa [Algérie, France] ; K. Hoummada [France] ; A. Derafa [Algérie] ; I. Blum [France] ; A. Portavoce [France] ; D. Mangelinck [France]

Source :

RBID : Pascal:14-0138911

Descripteurs français

English descriptors

Abstract

In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni2Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni2Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.
pA  
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A03   1    @0 Microelectron. eng.
A05       @2 120
A08 01  1  ENG  @1 Kinetics of growth and consumption of Ni rich phases
A09 01  1  ENG  @1 MAM 2013, March 10-13, Leuven, Belgium
A11 01  1    @1 TELLOUCHE-DERAFA (G.)
A11 02  1    @1 HOUMMADA (K.)
A11 03  1    @1 DERAFA (A.)
A11 04  1    @1 BLUM (I.)
A11 05  1    @1 PORTAVOCE (A.)
A11 06  1    @1 MANGELINCK (D.)
A12 01  1    @1 WILSON (Christopher J.) @9 ed.
A12 02  1    @1 DETAVERNIER (Christophe) @9 ed.
A14 01      @1 Département de physique, Faculté des sciences, Université de M'sila @2 M'sila 28000 @3 DZA @Z 1 aut.
A14 02      @1 IM2NP, Aix Marseille, CNRS, case 142 @2 13397 Marseille @3 FRA @Z 1 aut. @Z 2 aut. @Z 4 aut. @Z 5 aut. @Z 6 aut.
A14 03      @1 Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif @2 Sétif 19000 @3 DZA @Z 3 aut.
A15 01      @1 Imec @3 BEL @Z 1 aut.
A15 02      @1 University of Ghent @3 BEL @Z 2 aut.
A18 01  1    @1 Imec @2 Leuven @3 BEL @9 org-cong.
A18 02  1    @1 University of Ghent @2 Ghent @3 BEL @9 org-cong.
A20       @1 146-149
A21       @1 2014
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A43 01      @1 INIST @2 20003 @5 354000503267770230
A44       @0 0000 @1 © 2014 INIST-CNRS. All rights reserved.
A45       @0 23 ref.
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A60       @1 P @2 C
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A66 01      @0 NLD
C01 01    ENG  @0 In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni2Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni2Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.
C02 01  3    @0 001B60E80
C03 01  3  FRE  @0 Cinétique @5 01
C03 01  3  ENG  @0 Kinetics @5 01
C03 02  X  FRE  @0 In situ @5 02
C03 02  X  ENG  @0 In situ @5 02
C03 02  X  SPA  @0 In situ @5 02
C03 03  3  FRE  @0 Diffraction RX @5 03
C03 03  3  ENG  @0 XRD @5 03
C03 04  X  FRE  @0 Recuit isotherme @5 04
C03 04  X  ENG  @0 Isothermal annealing @5 04
C03 04  X  SPA  @0 Recocido isotérmico @5 04
C03 05  3  FRE  @0 Durée vie @5 05
C03 05  3  ENG  @0 Lifetime @5 05
C03 06  3  FRE  @0 Epaisseur @5 06
C03 06  3  ENG  @0 Thickness @5 06
C03 07  3  FRE  @0 Phénomène transitoire @5 07
C03 07  3  ENG  @0 Transients @5 07
C03 08  3  FRE  @0 Modèle thermodynamique @5 08
C03 08  3  ENG  @0 Thermodynamic model @5 08
C03 09  3  FRE  @0 Nickel @2 NC @5 22
C03 09  3  ENG  @0 Nickel @2 NC @5 22
C03 10  3  FRE  @0 6580 @4 INC @5 56
N21       @1 181
N44 01      @1 OTO
N82       @1 OTO
pR  
A30 01  1  ENG  @1 MAM2013 Materials for Advanced Metallization Workshop @2 22 @3 Leuven BEL @4 2013-03-10

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Pascal:14-0138911

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<term>Thermodynamic model</term>
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<div type="abstract" xml:lang="en">In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni
<sub>2</sub>
Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni
<sub>2</sub>
Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni
<sub>2</sub>
Si is observed when θ-Ni
<sub>2</sub>
Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.</div>
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<s0>In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni
<sub>2</sub>
Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni
<sub>2</sub>
Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni
<sub>2</sub>
Si is observed when θ-Ni
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Thermodynamic model</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Nickel</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Nickel</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE">
<s0>6580</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21>
<s1>181</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
<pR>
<fA30 i1="01" i2="1" l="ENG">
<s1>MAM2013 Materials for Advanced Metallization Workshop</s1>
<s2>22</s2>
<s3>Leuven BEL</s3>
<s4>2013-03-10</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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