Effect of alloying elements Mo and W on Ni silicides formation
Identifieur interne :
000416 ( PascalFrancis/Curation );
précédent :
000415;
suivant :
000417
Effect of alloying elements Mo and W on Ni silicides formation
Auteurs : A. Derafa [
Algérie] ;
G. Tellouche [
Algérie] ;
K. Hoummada [
France] ;
A. Bouabellou [
Algérie] ;
D. Mangelinck [
France]
Source :
-
Microelectronic engineering [ 0167-9317 ] ; 2014.
RBID : Pascal:14-0138912
Descripteurs français
- Pascal (Inist)
- Elément alliage,
Alliage(action),
In situ,
Diffraction RX,
Résistivité couche,
RBS,
Texture,
Conductivité électrique,
Phénomène transitoire,
Haute température,
Molybdène,
Siliciure de nickel,
Nickel,
Siliciure de molybdène,
7363,
MoSi2,
NiSi.
- Wicri :
English descriptors
- KwdEn :
- Alloying,
Alloying elements,
Electrical conductivity,
High temperature,
In situ,
Molybdenum,
Molybdenum silicide,
Nickel,
Nickel silicide,
RBS,
Sheet resistivity,
Texture,
Transients,
XRD.
Abstract
The effect of alloying Mo and W elements on the formation and stability of the Ni silicides are studied using in situ and ex situ measurements by X-ray diffraction (XRD), sheet resistance (Rs) and Rutherford back scattering (RBS). The results show that a low Mo concentration in Ni layer does not affect the sequence, texture and resistivity compared to the Ni/Si system. However, the addition of 10% Mo and 5% W in Ni layer leads to the suppression of a transient phase. For Ni (10%W), a (NixSiy) phase appears in the end of Ni consumption and the sheet resistance increases when this phase is formed. In all cases, ex situ XRD and RBS shows that, at high temperature, MoSi2 and WSi2 are formed at the surface before NiSi2. Low resistances films are obtained even for temperatures as high as 900 °C for the samples containing 10% Mo, 5% and 10% W.
| pA |
| A01 | 01 | 1 | | @0 0167-9317 |
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| A02 | 01 | | | @0 MIENEF |
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| A03 | | 1 | | @0 Microelectron. eng. |
|---|
| A05 | | | | @2 120 |
|---|
| A08 | 01 | 1 | ENG | @1 Effect of alloying elements Mo and W on Ni silicides formation |
|---|
| A09 | 01 | 1 | ENG | @1 MAM 2013, March 10-13, Leuven, Belgium |
|---|
| A11 | 01 | 1 | | @1 DERAFA (A.) |
|---|
| A11 | 02 | 1 | | @1 TELLOUCHE (G.) |
|---|
| A11 | 03 | 1 | | @1 HOUMMADA (K.) |
|---|
| A11 | 04 | 1 | | @1 BOUABELLOU (A.) |
|---|
| A11 | 05 | 1 | | @1 MANGELINCK (D.) |
|---|
| A12 | 01 | 1 | | @1 WILSON (Christopher J.) @9 ed. |
|---|
| A12 | 02 | 1 | | @1 DETAVERNIER (Christophe) @9 ed. |
|---|
| A14 | 01 | | | @1 LP3M, Département d'Optique et Mécanique de Precision, Université de Sétif @2 Sétif 19000 @3 DZA @Z 1 aut. |
|---|
| A14 | 02 | | | @1 Département de physique, Faculté des sciences, Université de M'sila @2 M'sila 28000 @3 DZA @Z 2 aut. |
|---|
| A14 | 03 | | | @1 Aix Marseille Université, CNRS- IM2NP, Faculté de Saint Jérôme @2 13397 Marseille @3 FRA @Z 3 aut. @Z 5 aut. |
|---|
| A14 | 04 | | | @1 LCMI, Université Mentouri Constantine @2 Constantine 25000 @3 DZA @Z 4 aut. |
|---|
| A15 | 01 | | | @1 Imec @3 BEL @Z 1 aut. |
|---|
| A15 | 02 | | | @1 University of Ghent @3 BEL @Z 2 aut. |
|---|
| A18 | 01 | 1 | | @1 Imec @2 Leuven @3 BEL @9 org-cong. |
|---|
| A18 | 02 | 1 | | @1 University of Ghent @2 Ghent @3 BEL @9 org-cong. |
|---|
| A20 | | | | @1 150-156 |
|---|
| A21 | | | | @1 2014 |
|---|
| A23 | 01 | | | @0 ENG |
|---|
| A43 | 01 | | | @1 INIST @2 20003 @5 354000503267770240 |
|---|
| A44 | | | | @0 0000 @1 © 2014 INIST-CNRS. All rights reserved. |
|---|
| A45 | | | | @0 13 ref. |
|---|
| A47 | 01 | 1 | | @0 14-0138912 |
|---|
| A60 | | | | @1 P @2 C |
|---|
| A61 | | | | @0 A |
|---|
| A64 | 01 | 1 | | @0 Microelectronic engineering |
|---|
| A66 | 01 | | | @0 NLD |
|---|
| C01 | 01 | | ENG | @0 The effect of alloying Mo and W elements on the formation and stability of the Ni silicides are studied using in situ and ex situ measurements by X-ray diffraction (XRD), sheet resistance (Rs) and Rutherford back scattering (RBS). The results show that a low Mo concentration in Ni layer does not affect the sequence, texture and resistivity compared to the Ni/Si system. However, the addition of 10% Mo and 5% W in Ni layer leads to the suppression of a transient phase. For Ni (10%W), a (NixSiy) phase appears in the end of Ni consumption and the sheet resistance increases when this phase is formed. In all cases, ex situ XRD and RBS shows that, at high temperature, MoSi2 and WSi2 are formed at the surface before NiSi2. Low resistances films are obtained even for temperatures as high as 900 °C for the samples containing 10% Mo, 5% and 10% W. |
|---|
| C02 | 01 | 3 | | @0 001B80A40G |
|---|
| C02 | 02 | 3 | | @0 001B70C63 |
|---|
| C03 | 01 | 3 | FRE | @0 Elément alliage @5 01 |
|---|
| C03 | 01 | 3 | ENG | @0 Alloying elements @5 01 |
|---|
| C03 | 02 | 3 | FRE | @0 Alliage(action) @5 02 |
|---|
| C03 | 02 | 3 | ENG | @0 Alloying @5 02 |
|---|
| C03 | 03 | X | FRE | @0 In situ @5 03 |
|---|
| C03 | 03 | X | ENG | @0 In situ @5 03 |
|---|
| C03 | 03 | X | SPA | @0 In situ @5 03 |
|---|
| C03 | 04 | 3 | FRE | @0 Diffraction RX @5 04 |
|---|
| C03 | 04 | 3 | ENG | @0 XRD @5 04 |
|---|
| C03 | 05 | 3 | FRE | @0 Résistivité couche @5 05 |
|---|
| C03 | 05 | 3 | ENG | @0 Sheet resistivity @5 05 |
|---|
| C03 | 06 | 3 | FRE | @0 RBS @5 06 |
|---|
| C03 | 06 | 3 | ENG | @0 RBS @5 06 |
|---|
| C03 | 07 | 3 | FRE | @0 Texture @5 08 |
|---|
| C03 | 07 | 3 | ENG | @0 Texture @5 08 |
|---|
| C03 | 08 | 3 | FRE | @0 Conductivité électrique @5 09 |
|---|
| C03 | 08 | 3 | ENG | @0 Electrical conductivity @5 09 |
|---|
| C03 | 09 | 3 | FRE | @0 Phénomène transitoire @5 10 |
|---|
| C03 | 09 | 3 | ENG | @0 Transients @5 10 |
|---|
| C03 | 10 | X | FRE | @0 Haute température @5 11 |
|---|
| C03 | 10 | X | ENG | @0 High temperature @5 11 |
|---|
| C03 | 10 | X | SPA | @0 Alta temperatura @5 11 |
|---|
| C03 | 11 | 3 | FRE | @0 Molybdène @2 NC @5 22 |
|---|
| C03 | 11 | 3 | ENG | @0 Molybdenum @2 NC @5 22 |
|---|
| C03 | 12 | X | FRE | @0 Siliciure de nickel @5 23 |
|---|
| C03 | 12 | X | ENG | @0 Nickel silicide @5 23 |
|---|
| C03 | 12 | X | SPA | @0 Níquel siliciuro @5 23 |
|---|
| C03 | 13 | 3 | FRE | @0 Nickel @2 NC @5 24 |
|---|
| C03 | 13 | 3 | ENG | @0 Nickel @2 NC @5 24 |
|---|
| C03 | 14 | X | FRE | @0 Siliciure de molybdène @5 25 |
|---|
| C03 | 14 | X | ENG | @0 Molybdenum silicide @5 25 |
|---|
| C03 | 14 | X | SPA | @0 Molibdeno siliciuro @5 25 |
|---|
| C03 | 15 | 3 | FRE | @0 7363 @4 INC @5 56 |
|---|
| C03 | 16 | 3 | FRE | @0 MoSi2 @4 INC @5 82 |
|---|
| C03 | 17 | 3 | FRE | @0 NiSi @4 INC @5 83 |
|---|
| N21 | | | | @1 181 |
|---|
| N44 | 01 | | | @1 OTO |
|---|
| N82 | | | | @1 OTO |
|---|
|
|---|
| pR |
| A30 | 01 | 1 | ENG | @1 MAM2013 Materials for Advanced Metallization Workshop @2 22 @3 Leuven BEL @4 2013-03-10 |
|---|
|
|---|
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Le document en format XML
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<s2>Sétif 19000</s2>
<s3>DZA</s3>
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<sZ>5 aut.</sZ>
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</publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Effect of alloying elements Mo and W on Ni silicides formation</title>
<author><name sortKey="Derafa, A" sort="Derafa, A" uniqKey="Derafa A" first="A." last="Derafa">A. Derafa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LP3M, Département d'Optique et Mécanique de Precision, Université de Sétif</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
</inist:fA14><country>Algérie</country>
</affiliation><author><name sortKey="Tellouche, G" sort="Tellouche, G" uniqKey="Tellouche G" first="G." last="Tellouche">G. Tellouche</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de physique, Faculté des sciences, Université de M'sila</s1>
<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>2 aut.</sZ>
</inist:fA14><country>Algérie</country>
</affiliation><author><name sortKey="Hoummada, K" sort="Hoummada, K" uniqKey="Hoummada K" first="K." last="Hoummada">K. Hoummada</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Aix Marseille Université, CNRS- IM2NP, Faculté de Saint Jérôme</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>France</country>
</affiliation><author><name sortKey="Bouabellou, A" sort="Bouabellou, A" uniqKey="Bouabellou A" first="A." last="Bouabellou">A. Bouabellou</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>LCMI, Université Mentouri Constantine</s1>
<s2>Constantine 25000</s2>
<s3>DZA</s3>
<sZ>4 aut.</sZ>
</inist:fA14><country>Algérie</country>
</affiliation><author><name sortKey="Mangelinck, D" sort="Mangelinck, D" uniqKey="Mangelinck D" first="D." last="Mangelinck">D. Mangelinck</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Aix Marseille Université, CNRS- IM2NP, Faculté de Saint Jérôme</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>France</country>
</affiliation><series><title level="j" type="main">Microelectronic engineering</title>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<idno type="ISSN">0167-9317</idno>
<imprint><date when="2014">2014</date>
</imprint><seriesStmt><title level="j" type="main">Microelectronic engineering</title>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<idno type="ISSN">0167-9317</idno>
</seriesStmt><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloying</term>
<term>Alloying elements</term>
<term>Electrical conductivity</term>
<term>High temperature</term>
<term>In situ</term>
<term>Molybdenum</term>
<term>Molybdenum silicide</term>
<term>Nickel</term>
<term>Nickel silicide</term>
<term>RBS</term>
<term>Sheet resistivity</term>
<term>Texture</term>
<term>Transients</term>
<term>XRD</term>
</keywords><keywords scheme="Pascal" xml:lang="fr"><term>Elément alliage</term>
<term>Alliage(action)</term>
<term>In situ</term>
<term>Diffraction RX</term>
<term>Résistivité couche</term>
<term>RBS</term>
<term>Texture</term>
<term>Conductivité électrique</term>
<term>Phénomène transitoire</term>
<term>Haute température</term>
<term>Molybdène</term>
<term>Siliciure de nickel</term>
<term>Nickel</term>
<term>Siliciure de molybdène</term>
<term>7363</term>
<term>MoSi2</term>
<term>NiSi</term>
</keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Molybdène</term>
<term>Nickel</term>
</keywords><front><div type="abstract" xml:lang="en">The effect of alloying Mo and W elements on the formation and stability of the Ni silicides are studied using in situ and ex situ measurements by X-ray diffraction (XRD), sheet resistance (Rs) and Rutherford back scattering (RBS). The results show that a low Mo concentration in Ni layer does not affect the sequence, texture and resistivity compared to the Ni/Si system. However, the addition of 10% Mo and 5% W in Ni layer leads to the suppression of a transient phase. For Ni (10%W), a (Ni<sub>x</sub>
Si<sub>y</sub>
) phase appears in the end of Ni consumption and the sheet resistance increases when this phase is formed. In all cases, ex situ XRD and RBS shows that, at high temperature, MoSi<sub>2</sub>
and WSi<sub>2</sub>
are formed at the surface before NiSi<sub>2</sub>
. Low resistances films are obtained even for temperatures as high as 900 °C for the samples containing 10% Mo, 5% and 10% W.</div><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0>
</fA01><fA02 i1="01"><s0>MIENEF</s0>
</fA02><fA03 i2="1"><s0>Microelectron. eng.</s0>
</fA03><fA05><s2>120</s2>
</fA05><fA08 i1="01" i2="1" l="ENG"><s1>Effect of alloying elements Mo and W on Ni silicides formation</s1>
</fA08><fA09 i1="01" i2="1" l="ENG"><s1>MAM 2013, March 10-13, Leuven, Belgium</s1>
</fA09><fA11 i1="01" i2="1"><s1>DERAFA (A.)</s1>
</fA11><fA11 i1="02" i2="1"><s1>TELLOUCHE (G.)</s1>
</fA11><fA11 i1="03" i2="1"><s1>HOUMMADA (K.)</s1>
</fA11><fA11 i1="04" i2="1"><s1>BOUABELLOU (A.)</s1>
</fA11><fA11 i1="05" i2="1"><s1>MANGELINCK (D.)</s1>
</fA11><fA12 i1="01" i2="1"><s1>WILSON (Christopher J.)</s1>
<s9>ed.</s9>
</fA12><fA12 i1="02" i2="1"><s1>DETAVERNIER (Christophe)</s1>
<s9>ed.</s9>
</fA12><fA14 i1="01"><s1>LP3M, Département d'Optique et Mécanique de Precision, Université de Sétif</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
</fA14><fA14 i1="02"><s1>Département de physique, Faculté des sciences, Université de M'sila</s1>
<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>2 aut.</sZ>
</fA14><fA14 i1="03"><s1>Aix Marseille Université, CNRS- IM2NP, Faculté de Saint Jérôme</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14><fA14 i1="04"><s1>LCMI, Université Mentouri Constantine</s1>
<s2>Constantine 25000</s2>
<s3>DZA</s3>
<sZ>4 aut.</sZ>
</fA14><fA15 i1="01"><s1>Imec</s1>
<s3>BEL</s3>
<sZ>1 aut.</sZ>
</fA15><fA15 i1="02"><s1>University of Ghent</s1>
<s3>BEL</s3>
<sZ>2 aut.</sZ>
</fA15><fA18 i1="01" i2="1"><s1>Imec</s1>
<s2>Leuven</s2>
<s3>BEL</s3>
<s9>org-cong.</s9>
</fA18><fA18 i1="02" i2="1"><s1>University of Ghent</s1>
<s2>Ghent</s2>
<s3>BEL</s3>
<s9>org-cong.</s9>
</fA18><fA20><s1>150-156</s1>
</fA20><fA21><s1>2014</s1>
</fA21><fA23 i1="01"><s0>ENG</s0>
</fA23><fA43 i1="01"><s1>INIST</s1>
<s2>20003</s2>
<s5>354000503267770240</s5>
</fA43><fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44><fA45><s0>13 ref.</s0>
</fA45><fA47 i1="01" i2="1"><s0>14-0138912</s0>
</fA47><fA60><s1>P</s1>
<s2>C</s2>
</fA60><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0>
</fA64><fA66 i1="01"><s0>NLD</s0>
</fA66><fC01 i1="01" l="ENG"><s0>The effect of alloying Mo and W elements on the formation and stability of the Ni silicides are studied using in situ and ex situ measurements by X-ray diffraction (XRD), sheet resistance (Rs) and Rutherford back scattering (RBS). The results show that a low Mo concentration in Ni layer does not affect the sequence, texture and resistivity compared to the Ni/Si system. However, the addition of 10% Mo and 5% W in Ni layer leads to the suppression of a transient phase. For Ni (10%W), a (Ni<sub>x</sub>
Si<sub>y</sub>
) phase appears in the end of Ni consumption and the sheet resistance increases when this phase is formed. In all cases, ex situ XRD and RBS shows that, at high temperature, MoSi<sub>2</sub>
and WSi<sub>2</sub>
are formed at the surface before NiSi<sub>2</sub>
. Low resistances films are obtained even for temperatures as high as 900 °C for the samples containing 10% Mo, 5% and 10% W.</s0><fC02 i1="01" i2="3"><s0>001B80A40G</s0>
</fC02><fC02 i1="02" i2="3"><s0>001B70C63</s0>
</fC02><fC03 i1="01" i2="3" l="FRE"><s0>Elément alliage</s0>
<s5>01</s5>
</fC03><fC03 i1="01" i2="3" l="ENG"><s0>Alloying elements</s0>
<s5>01</s5>
</fC03><fC03 i1="02" i2="3" l="FRE"><s0>Alliage(action)</s0>
<s5>02</s5>
</fC03><fC03 i1="02" i2="3" l="ENG"><s0>Alloying</s0>
<s5>02</s5>
</fC03><fC03 i1="03" i2="X" l="FRE"><s0>In situ</s0>
<s5>03</s5>
</fC03><fC03 i1="03" i2="X" l="ENG"><s0>In situ</s0>
<s5>03</s5>
</fC03><fC03 i1="03" i2="X" l="SPA"><s0>In situ</s0>
<s5>03</s5>
</fC03><fC03 i1="04" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>04</s5>
</fC03><fC03 i1="04" i2="3" l="ENG"><s0>XRD</s0>
<s5>04</s5>
</fC03><fC03 i1="05" i2="3" l="FRE"><s0>Résistivité couche</s0>
<s5>05</s5>
</fC03><fC03 i1="05" i2="3" l="ENG"><s0>Sheet resistivity</s0>
<s5>05</s5>
</fC03><fC03 i1="06" i2="3" l="FRE"><s0>RBS</s0>
<s5>06</s5>
</fC03><fC03 i1="06" i2="3" l="ENG"><s0>RBS</s0>
<s5>06</s5>
</fC03><fC03 i1="07" i2="3" l="FRE"><s0>Texture</s0>
<s5>08</s5>
</fC03><fC03 i1="07" i2="3" l="ENG"><s0>Texture</s0>
<s5>08</s5>
</fC03><fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>09</s5>
</fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>09</s5>
</fC03><fC03 i1="09" i2="3" l="FRE"><s0>Phénomène transitoire</s0>
<s5>10</s5>
</fC03><fC03 i1="09" i2="3" l="ENG"><s0>Transients</s0>
<s5>10</s5>
</fC03><fC03 i1="10" i2="X" l="FRE"><s0>Haute température</s0>
<s5>11</s5>
</fC03><fC03 i1="10" i2="X" l="ENG"><s0>High temperature</s0>
<s5>11</s5>
</fC03><fC03 i1="10" i2="X" l="SPA"><s0>Alta temperatura</s0>
<s5>11</s5>
</fC03><fC03 i1="11" i2="3" l="FRE"><s0>Molybdène</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03><fC03 i1="11" i2="3" l="ENG"><s0>Molybdenum</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03><fC03 i1="12" i2="X" l="FRE"><s0>Siliciure de nickel</s0>
<s5>23</s5>
</fC03><fC03 i1="12" i2="X" l="ENG"><s0>Nickel silicide</s0>
<s5>23</s5>
</fC03><fC03 i1="12" i2="X" l="SPA"><s0>Níquel siliciuro</s0>
<s5>23</s5>
</fC03><fC03 i1="13" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>24</s5>
</fC03><fC03 i1="13" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>24</s5>
</fC03><fC03 i1="14" i2="X" l="FRE"><s0>Siliciure de molybdène</s0>
<s5>25</s5>
</fC03><fC03 i1="14" i2="X" l="ENG"><s0>Molybdenum silicide</s0>
<s5>25</s5>
</fC03><fC03 i1="14" i2="X" l="SPA"><s0>Molibdeno siliciuro</s0>
<s5>25</s5>
</fC03><fC03 i1="15" i2="3" l="FRE"><s0>7363</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03><fC03 i1="16" i2="3" l="FRE"><s0>MoSi2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03><fC03 i1="17" i2="3" l="FRE"><s0>NiSi</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03><fN21><s1>181</s1>
</fN21><fN44 i1="01"><s1>OTO</s1>
</fN44><fN82><s1>OTO</s1>
</fN82><pR><fA30 i1="01" i2="1" l="ENG"><s1>MAM2013 Materials for Advanced Metallization Workshop</s1>
<s2>22</s2>
<s3>Leuven BEL</s3>
<s4>2013-03-10</s4>
</fA30>
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