Kinetics of growth and consumption of Ni rich phases
Identifieur interne :
000026 ( PascalFrancis/Corpus );
précédent :
000025;
suivant :
000027
Kinetics of growth and consumption of Ni rich phases
Auteurs : G. Tellouche-Derafa ;
K. Hoummada ;
A. Derafa ;
I. Blum ;
A. Portavoce ;
D. MangelinckSource :
-
Microelectronic engineering [ 0167-9317 ] ; 2014.
RBID : Pascal:14-0138911
Descripteurs français
English descriptors
Abstract
In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni2Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni2Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
pA |
A01 | 01 | 1 | | @0 0167-9317 |
---|
A02 | 01 | | | @0 MIENEF |
---|
A03 | | 1 | | @0 Microelectron. eng. |
---|
A05 | | | | @2 120 |
---|
A08 | 01 | 1 | ENG | @1 Kinetics of growth and consumption of Ni rich phases |
---|
A09 | 01 | 1 | ENG | @1 MAM 2013, March 10-13, Leuven, Belgium |
---|
A11 | 01 | 1 | | @1 TELLOUCHE-DERAFA (G.) |
---|
A11 | 02 | 1 | | @1 HOUMMADA (K.) |
---|
A11 | 03 | 1 | | @1 DERAFA (A.) |
---|
A11 | 04 | 1 | | @1 BLUM (I.) |
---|
A11 | 05 | 1 | | @1 PORTAVOCE (A.) |
---|
A11 | 06 | 1 | | @1 MANGELINCK (D.) |
---|
A12 | 01 | 1 | | @1 WILSON (Christopher J.) @9 ed. |
---|
A12 | 02 | 1 | | @1 DETAVERNIER (Christophe) @9 ed. |
---|
A14 | 01 | | | @1 Département de physique, Faculté des sciences, Université de M'sila @2 M'sila 28000 @3 DZA @Z 1 aut. |
---|
A14 | 02 | | | @1 IM2NP, Aix Marseille, CNRS, case 142 @2 13397 Marseille @3 FRA @Z 1 aut. @Z 2 aut. @Z 4 aut. @Z 5 aut. @Z 6 aut. |
---|
A14 | 03 | | | @1 Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif @2 Sétif 19000 @3 DZA @Z 3 aut. |
---|
A15 | 01 | | | @1 Imec @3 BEL @Z 1 aut. |
---|
A15 | 02 | | | @1 University of Ghent @3 BEL @Z 2 aut. |
---|
A18 | 01 | 1 | | @1 Imec @2 Leuven @3 BEL @9 org-cong. |
---|
A18 | 02 | 1 | | @1 University of Ghent @2 Ghent @3 BEL @9 org-cong. |
---|
A20 | | | | @1 146-149 |
---|
A21 | | | | @1 2014 |
---|
A23 | 01 | | | @0 ENG |
---|
A43 | 01 | | | @1 INIST @2 20003 @5 354000503267770230 |
---|
A44 | | | | @0 0000 @1 © 2014 INIST-CNRS. All rights reserved. |
---|
A45 | | | | @0 23 ref. |
---|
A47 | 01 | 1 | | @0 14-0138911 |
---|
A60 | | | | @1 P @2 C |
---|
A61 | | | | @0 A |
---|
A64 | 01 | 1 | | @0 Microelectronic engineering |
---|
A66 | 01 | | | @0 NLD |
---|
C01 | 01 | | ENG | @0 In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni2Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni2Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed. |
---|
C02 | 01 | 3 | | @0 001B60E80 |
---|
C03 | 01 | 3 | FRE | @0 Cinétique @5 01 |
---|
C03 | 01 | 3 | ENG | @0 Kinetics @5 01 |
---|
C03 | 02 | X | FRE | @0 In situ @5 02 |
---|
C03 | 02 | X | ENG | @0 In situ @5 02 |
---|
C03 | 02 | X | SPA | @0 In situ @5 02 |
---|
C03 | 03 | 3 | FRE | @0 Diffraction RX @5 03 |
---|
C03 | 03 | 3 | ENG | @0 XRD @5 03 |
---|
C03 | 04 | X | FRE | @0 Recuit isotherme @5 04 |
---|
C03 | 04 | X | ENG | @0 Isothermal annealing @5 04 |
---|
C03 | 04 | X | SPA | @0 Recocido isotérmico @5 04 |
---|
C03 | 05 | 3 | FRE | @0 Durée vie @5 05 |
---|
C03 | 05 | 3 | ENG | @0 Lifetime @5 05 |
---|
C03 | 06 | 3 | FRE | @0 Epaisseur @5 06 |
---|
C03 | 06 | 3 | ENG | @0 Thickness @5 06 |
---|
C03 | 07 | 3 | FRE | @0 Phénomène transitoire @5 07 |
---|
C03 | 07 | 3 | ENG | @0 Transients @5 07 |
---|
C03 | 08 | 3 | FRE | @0 Modèle thermodynamique @5 08 |
---|
C03 | 08 | 3 | ENG | @0 Thermodynamic model @5 08 |
---|
C03 | 09 | 3 | FRE | @0 Nickel @2 NC @5 22 |
---|
C03 | 09 | 3 | ENG | @0 Nickel @2 NC @5 22 |
---|
C03 | 10 | 3 | FRE | @0 6580 @4 INC @5 56 |
---|
N21 | | | | @1 181 |
---|
N44 | 01 | | | @1 OTO |
---|
N82 | | | | @1 OTO |
---|
|
pR |
A30 | 01 | 1 | ENG | @1 MAM2013 Materials for Advanced Metallization Workshop @2 22 @3 Leuven BEL @4 2013-03-10 |
---|
|
Format Inist (serveur)
NO : | PASCAL 14-0138911 INIST |
ET : | Kinetics of growth and consumption of Ni rich phases |
AU : | TELLOUCHE-DERAFA (G.); HOUMMADA (K.); DERAFA (A.); BLUM (I.); PORTAVOCE (A.); MANGELINCK (D.); WILSON (Christopher J.); DETAVERNIER (Christophe) |
AF : | Département de physique, Faculté des sciences, Université de M'sila/M'sila 28000/Algérie (1 aut.); IM2NP, Aix Marseille, CNRS, case 142/13397 Marseille/France (1 aut., 2 aut., 4 aut., 5 aut., 6 aut.); Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif/Sétif 19000/Algérie (3 aut.); Imec/Belgique (1 aut.); University of Ghent/Belgique (2 aut.) |
DT : | Publication en série; Congrès; Niveau analytique |
SO : | Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da. 2014; Vol. 120; Pp. 146-149; Bibl. 23 ref. |
LA : | Anglais |
EA : | In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni2Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni2Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni2Si is observed when θ-Ni2Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed. |
CC : | 001B60E80 |
FD : | Cinétique; In situ; Diffraction RX; Recuit isotherme; Durée vie; Epaisseur; Phénomène transitoire; Modèle thermodynamique; Nickel; 6580 |
ED : | Kinetics; In situ; XRD; Isothermal annealing; Lifetime; Thickness; Transients; Thermodynamic model; Nickel |
SD : | In situ; Recocido isotérmico |
LO : | INIST-20003.354000503267770230 |
ID : | 14-0138911 |
Links to Exploration step
Pascal:14-0138911
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Kinetics of growth and consumption of Ni rich phases</title>
<author><name sortKey="Tellouche Derafa, G" sort="Tellouche Derafa, G" uniqKey="Tellouche Derafa G" first="G." last="Tellouche-Derafa">G. Tellouche-Derafa</name>
<affiliation><inist:fA14 i1="01"><s1>Département de physique, Faculté des sciences, Université de M'sila</s1>
<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
</affiliation>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Hoummada, K" sort="Hoummada, K" uniqKey="Hoummada K" first="K." last="Hoummada">K. Hoummada</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Derafa, A" sort="Derafa, A" uniqKey="Derafa A" first="A." last="Derafa">A. Derafa</name>
<affiliation><inist:fA14 i1="03"><s1>Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Blum, I" sort="Blum, I" uniqKey="Blum I" first="I." last="Blum">I. Blum</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Portavoce, A" sort="Portavoce, A" uniqKey="Portavoce A" first="A." last="Portavoce">A. Portavoce</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Mangelinck, D" sort="Mangelinck, D" uniqKey="Mangelinck D" first="D." last="Mangelinck">D. Mangelinck</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">14-0138911</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0138911 INIST</idno>
<idno type="RBID">Pascal:14-0138911</idno>
<idno type="wicri:Area/PascalFrancis/Corpus">000026</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Kinetics of growth and consumption of Ni rich phases</title>
<author><name sortKey="Tellouche Derafa, G" sort="Tellouche Derafa, G" uniqKey="Tellouche Derafa G" first="G." last="Tellouche-Derafa">G. Tellouche-Derafa</name>
<affiliation><inist:fA14 i1="01"><s1>Département de physique, Faculté des sciences, Université de M'sila</s1>
<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
</affiliation>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Hoummada, K" sort="Hoummada, K" uniqKey="Hoummada K" first="K." last="Hoummada">K. Hoummada</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Derafa, A" sort="Derafa, A" uniqKey="Derafa A" first="A." last="Derafa">A. Derafa</name>
<affiliation><inist:fA14 i1="03"><s1>Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Blum, I" sort="Blum, I" uniqKey="Blum I" first="I." last="Blum">I. Blum</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Portavoce, A" sort="Portavoce, A" uniqKey="Portavoce A" first="A." last="Portavoce">A. Portavoce</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Mangelinck, D" sort="Mangelinck, D" uniqKey="Mangelinck D" first="D." last="Mangelinck">D. Mangelinck</name>
<affiliation><inist:fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Microelectronic engineering</title>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<idno type="ISSN">0167-9317</idno>
<imprint><date when="2014">2014</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Microelectronic engineering</title>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<idno type="ISSN">0167-9317</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>In situ</term>
<term>Isothermal annealing</term>
<term>Kinetics</term>
<term>Lifetime</term>
<term>Nickel</term>
<term>Thermodynamic model</term>
<term>Thickness</term>
<term>Transients</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cinétique</term>
<term>In situ</term>
<term>Diffraction RX</term>
<term>Recuit isotherme</term>
<term>Durée vie</term>
<term>Epaisseur</term>
<term>Phénomène transitoire</term>
<term>Modèle thermodynamique</term>
<term>Nickel</term>
<term>6580</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni<sub>2</sub>
Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni<sub>2</sub>
Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni<sub>2</sub>
Si is observed when θ-Ni<sub>2</sub>
Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0>
</fA01>
<fA02 i1="01"><s0>MIENEF</s0>
</fA02>
<fA03 i2="1"><s0>Microelectron. eng.</s0>
</fA03>
<fA05><s2>120</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Kinetics of growth and consumption of Ni rich phases</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>MAM 2013, March 10-13, Leuven, Belgium</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>TELLOUCHE-DERAFA (G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HOUMMADA (K.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>DERAFA (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BLUM (I.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>PORTAVOCE (A.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>MANGELINCK (D.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>WILSON (Christopher J.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>DETAVERNIER (Christophe)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Département de physique, Faculté des sciences, Université de M'sila</s1>
<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>IM2NP, Aix Marseille, CNRS, case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Imec</s1>
<s3>BEL</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Ghent</s1>
<s3>BEL</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>Imec</s1>
<s2>Leuven</s2>
<s3>BEL</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="02" i2="1"><s1>University of Ghent</s1>
<s2>Ghent</s2>
<s3>BEL</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>146-149</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>20003</s2>
<s5>354000503267770230</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>23 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0138911</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni<sub>2</sub>
Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni<sub>2</sub>
Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni<sub>2</sub>
Si is observed when θ-Ni<sub>2</sub>
Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60E80</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Cinétique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Kinetics</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>In situ</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>In situ</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>In situ</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>XRD</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Recuit isotherme</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Isothermal annealing</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Recocido isotérmico</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Durée vie</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Lifetime</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Epaisseur</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Thickness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Phénomène transitoire</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Transients</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Modèle thermodynamique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Thermodynamic model</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>6580</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21><s1>181</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MAM2013 Materials for Advanced Metallization Workshop</s1>
<s2>22</s2>
<s3>Leuven BEL</s3>
<s4>2013-03-10</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 14-0138911 INIST</NO>
<ET>Kinetics of growth and consumption of Ni rich phases</ET>
<AU>TELLOUCHE-DERAFA (G.); HOUMMADA (K.); DERAFA (A.); BLUM (I.); PORTAVOCE (A.); MANGELINCK (D.); WILSON (Christopher J.); DETAVERNIER (Christophe)</AU>
<AF>Département de physique, Faculté des sciences, Université de M'sila/M'sila 28000/Algérie (1 aut.); IM2NP, Aix Marseille, CNRS, case 142/13397 Marseille/France (1 aut., 2 aut., 4 aut., 5 aut., 6 aut.); Laboratoire LP3M, Département d'Optique et Mécanique de Précision, Université de Sétif/Sétif 19000/Algérie (3 aut.); Imec/Belgique (1 aut.); University of Ghent/Belgique (2 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da. 2014; Vol. 120; Pp. 146-149; Bibl. 23 ref.</SO>
<LA>Anglais</LA>
<EA>In situ X-ray diffraction measurements performed during isothermal annealing show that the life time of θ-Ni<sub>2</sub>
Si depends on the initial Ni thickness. A slow kinetic of consumption of θ-Ni<sub>2</sub>
Si is observed during the reaction of 50 nm Ni with Si substrate, while a fast rate of consumption of θ-Ni<sub>2</sub>
Si is observed when θ-Ni<sub>2</sub>
Si is a transient phase. The kinetics of growth and consumption of Ni-rich phases is discussed.</EA>
<CC>001B60E80</CC>
<FD>Cinétique; In situ; Diffraction RX; Recuit isotherme; Durée vie; Epaisseur; Phénomène transitoire; Modèle thermodynamique; Nickel; 6580</FD>
<ED>Kinetics; In situ; XRD; Isothermal annealing; Lifetime; Thickness; Transients; Thermodynamic model; Nickel</ED>
<SD>In situ; Recocido isotérmico</SD>
<LO>INIST-20003.354000503267770230</LO>
<ID>14-0138911</ID>
</server>
</inist>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/NickelMaghrebV1/Data/PascalFrancis/Corpus
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000026 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/PascalFrancis/Corpus/biblio.hfd -nk 000026 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Terre
|area= NickelMaghrebV1
|flux= PascalFrancis
|étape= Corpus
|type= RBID
|clé= Pascal:14-0138911
|texte= Kinetics of growth and consumption of Ni rich phases
}}
| This area was generated with Dilib version V0.6.27. Data generation: Fri Mar 24 23:14:20 2017. Site generation: Tue Mar 5 17:03:47 2024 | |