List of bibliographic references
Number of relevant bibliographic references: 45.
[0-20] [
0 - 20][
0 - 45][
20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 000738 (2013) |
| Photocurable propyl-cinnamate-functionalized polyhedral oligomeric silsesquioxane as a gate dielectric for organic thin film transistors |
| 001017 (2013) |
| Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes |
| 00BC22 (2004) |
| A nanoparticle-coated nanocrystal-gate for an InP-based heterostructure field-effect transistor |
| 00C474 (2003-04-15) |
| Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KH |
| 00EF21 (2002) |
| Metalorganic chemical vapor deposition of oxide films on semiconductor substrates using aluminum, gallium, and indium alkyl chloride precursors |
| 013039 (2000) |
| Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures |
| 013094 (2000) |
| High temperature sol-gel insulation coatings for HTS magnets and their adhesion properties |
| 014A59 (1999) |
| Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy |
| 016F29 (1998) |
| Impedance analysis of electrodeposited insulating polypyrrole |
| 017286 (1998) |
| Effects of insulating layers on the performance of organic electroluminescent devices |
| 017889 (1997-11) |
| Élaboration par dépôt chimique en phase vapeur assisté par plasma (PECVD) de films minces de nitrure de bore (BN) sur phosphure d'indium (InP) |
| 017C35 (1997-07) |
| CONTRIBUTION A L'AMELIORATION DE METHODES DE CARACTERISATIONS ELECTRIQUES DE STRUCTURES MIS (Au/BN/InP) ET MOS |
| 018863 (1997) |
| Organic electroluminescence device based on an electrodeposited poly(3-substituted thiophen) film |
| 019083 (1997) |
| Electrical conduction in POxNyInZ films deposited on InP |
| 01AC37 (1996) |
| Highly sensitive In0.75Ga0.25As/AlInAs Hall sensors |
| 01B025 (1996) |
| Differential charging in XPS. Part II. Sample mounting and X-ray flux effects on heterogeneous samples |
| 01B140 (1996) |
| Comparative measurements of the electron emission behavior of Si3N4-InGaAs interfaces prepared by remote and direct PECVD |
| 01B210 (1996) |
| Calculation of surface peak intensity of GaAs and InP in high-energy ion scattering |
| 01C207 (1995) |
| Self-trapped exciton luminescence induced by photoexcitation of the impurity ions in alkali halides |
| 01CD43 (1995) |
| Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition |
| 01EE22 (1993) |
| Dépôt de nitrure de bore par PECVD pour son utilisation comme isolant de grille dans les structures MISFET sur InP |
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