Bâtiment < Béryllium < Béton

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 156.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
003690 (2010)		The new binary intermetallic YbGe2.83
003865 (2010)		Structural characteristics of semipolar InN (112/) films grown on yttria stabilized zirconia substrates
003D36 (2010)		Mechanical Anisotropy in Crystalline Saccharin: Nanoindentation Studies
003F43 (2010)		In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate
004094 (2010)		Geometry Effect on the Strain-Induced Self-Rolling of Semiconductor Membranes
004501 (2010)		Density- and adhesion-controlled ZnO nanorod arrays on the ITO flexible substrates and their electrochromic performance
004586 (2010)		Chemical synthesis of Cu(In) metal inks to prepare CuInS2 thin films and solar cells
004F48 (2009)		NANOPOROUS METAL COMPONENTS BONDED WITH SPUTTERED SOLDER FOR EQUATION-OF-STATE LASER TARGETS
007392 (2007)		Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy
007881 (2007)		Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
008B01 (2006)		High-gain new InGaAsN heterostructure
009C81 (2005)		Heterogeneous breeding blanket experiment with lithium titanate and beryllium
00A200 (2005)		Calculations of electron inelastic mean free paths. VIII. Data for 15 elemental solids over the 50-2000 eV range
00A614 (2004-04-01)		p-Type Doping Characteristics of GaInNAs:Be Grown by Solid Source Molecular Beam Epitaxy
00BB83 (2004)		Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates
00C324 (2003-06)		Multielement analysis of deep sea ferromanganese nodules by ICP-MS
00C401 (2003-05-05)		Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm
00C501 (2003-04-01)		Extinction ratio improvement of an electroabsorption modulator by using Be as a p-type dopant with small diffusion coefficient
00CC10 (2003)		Shallow ohmic contacts to p-type InAs
00D967 (2003)		Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2 N0.015As0.985 at 1250 nm
00DB70 (2003)		1-Tb/s 16-b all-optical serial-to-parallel conversion using a surface-reflection optical switch

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