Thresghold currents < Threshold < Threshold current

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 112.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000974 (2013)		Laterally-coupled distributed feedback laser with first-order gratings by interference lithography
000B04 (2013)		InAs/AISb quantum cascade lasers operating near 20 μm
001242 (2013)		1.9 μm hybrid silicon/III-V semiconductor laser
014F94 (1999)		InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
015716 (1999)		AlGaInAs/InP strained-layer quantum well lasers at 1.3 μm grown by solid source molecular beam epitaxy
016845 (1998)		Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well number
016E76 (1998)		InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy
017342 (1998)		Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching
017526 (1998)		Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD
01AD84 (1996)		Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasers
01BF24 (1995)		Threshold current and its temperature dependence in InGaAsP/InP strained quantum-well lasers under a magnetic field
01CA60 (1995)		GaInAs/GaAs micro-arc ring semiconductor laser
01DC76 (1994)		Well width dependence of threshold current density in tensile-strained InGaAs/IngaAsP quantum-well lasers
01DD10 (1994)		Uniform characteristics with low threshold and high efficiency for a single-transverse-mode vertical-cavity surface-emitting laser-type device array
01DE58 (1994)		Temperature dependence of 2μm strained-quantum-well InGaAs/InGaAsP/InP diode lasers
01DF02 (1994)		Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy
01DF56 (1994)		Strained InGaAs quantum well lasers with small-divergence angles for high-power pump modules
01E414 (1994)		Low-threshold continuous-wave surface emitting lasers with etched void confinement
01E425 (1994)		Low threshold, room temperatures pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer
01E530 (1994)		Influence of dislocations on the threshold current density of AlGaAs/GaAs strained quantum-well lasers
01E786 (1994)		Extremely low threshold (0.56mA) operation in 1.3μm InGaAsP/InP compressive-strained-MQW lasers

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