Thread < Threading dislocation < Threading dislocations

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List of bibliographic references

Number of relevant bibliographic references: 76.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000270 (2013)		Type-II InAs/GaSb superlattice grown on InP substrate
000309 (2013)		Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000892 (2013)		Misfit management for reduced dislocation formation in epitaxial quantum-dot-based devices
000899 (2013)		Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate
000936 (2013)		MBE fabrication of III-N-based laser diodes and its development to industrial system
000B05 (2013)		InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning
000C26 (2013)		Growth of metamorphic InGaP layers on GaAs substrates
000D13 (2013)		Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates
000D36 (2013)		Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics
001026 (2013)		Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
001328 (2012)		Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells
001382 (2012)		The effect of helium ion implantation on the relaxation of strained InGaAs thin films
001503 (2012)		Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
001508 (2012)		Structural and local electrical properties of AlInN/AlN/GaN heterostructures
001648 (2012)		Progress in large area organometallic vapor phase epitaxy for III-V multijunction photovoltaics
001806 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
001835 (2012)		Morphology and origin of V-defects in semipolar (11-22) InGaN
001842 (2012)		Molecular Beam Epitaxy Growth of GaAs/InAs Core-Shell Nanowires and Fabrication of InAs Nanotubes
001A87 (2012)		High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys
001F67 (2012)		Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition : Indium Nitride and Related Alloys
002178 (2011)		Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layer

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