Surface phonon polariton < Surface phonons < Surface photoabsorption

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]

Ident.	Authors (with country if any)	Title
002274 (2011)		Theoretical studies of surface phonon polariton in wurtzite AlInN ternary alloy
003D29 (2010)		Metal-insulator transition in Si(111 )-(4 × 1 )/(8 × 2)-In studied by optical spectroscopy
003F75 (2010)		IR reflection, attenuated total reflection, and Raman scattering of porous polar III-V semiconductors
005991 (2009)		Ab initio calculations of phonon dispersion relations for bulk and (11 0) surface of cubic InN
006828 (2008)		Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductors
009631 (2005)		Raman and photoluminescence studies on nanocrystalline ZnO grown on GaInPAs substrates
00C272 (2003-06-15)		Phonon and polarized reflectance spectra from Si(111)-(4×1)In: Evidence for a charge-density-wave driven phase transition
00C744 (2003-01-13)		Size-dependent Raman study of InP quantum dots
00DC88 (2002-11-15)		Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process
00DE45 (2002-09-15)		Phonons on group-III nitride (110) surfaces
00E187 (2002-05-20)		Projecting picosecond lattice dynamics through x-ray topography
00E619 (2002-01-15)		Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces
00F079 (2002)		Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
00F367 (2002)		First-principles study of structural and dynamical properties of As overlayers on InP(110)
00F589 (2002)		Dynamical properties of Sb- and Bi-covered (110) surfaces of III-V compounds
010049 (2001-06-15)		Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K
010494 (2001-02-01)		Phonon dispersion of indium along [111]
010853 (2001)		Surface phonons of GaP(1 1 0) and InAs(1 1 0)
011B72 (2000-10-15)		Angle-resolved high-resolution electron-energy-loss study of In-adsorbed Si(111)-(4×1) and -(8×2) surfaces
011E04 (2000-07-20)		Erratum: Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering [J. Vac. Sci. Technol. B 18, 144 (2000)]
012513 (2000-01)		Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/KwdEn.i -k "Surface phonons" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/KwdEn.i  \
                -Sk "Surface phonons" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Main/Repository/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Surface phonons
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024