Saphenous vein < Sapphire < Sapphire lasers

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List of bibliographic references

Number of relevant bibliographic references: 94.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000588 (2013)		Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
000A97 (2013)		InGaN-based solar cells with a tapered GaN structure
000D37 (2013)		Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
000E63 (2013)		Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template
001A38 (2012)		Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate
002144 (2011)		X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE
002145 (2011)		X-ray Absorption Fine-Structure and Optical Studies of AlZnO Nano-Thin Films Grown on Sapphire by Pulsed Laser Deposition
002300 (2011)		The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
002460 (2011)		Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities
002976 (2011)		Moldable AR microstructures for improved laser transmission and damage resistance in CIRCM fiber optic beam delivery systems
003207 (2011)		Determination of fracture toughness of bulk materials and thin films by nanoindentation: comparison of different models
003262 (2011)		Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire
003964 (2010)		Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets
003B74 (2010)		Optimization of a-plane (1 12 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 1 0 2) sapphire
003D27 (2010)		Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source
003D53 (2010)		MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain
003E14 (2010)		Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes
004036 (2010)		High performance InGaN LEDs on Si (111) substrates grown by MOCVD
004602 (2010)		Characterization of an InGaN based photoemissive device
004616 (2010)		Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate
004629 (2010)		Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate

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