Radiative decay < Radiative lifetimes < Radiative properties

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List of bibliographic references

Number of relevant bibliographic references: 110.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000B48 (2013)		Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
001467 (2012)		Suppressed Blinking and Auger Recombination in Near-Infrared Type-II InP/CdS Nanocrystal Quantum Dots
001531 (2012)		Spectroscopic characteristics of 1.54 μm emission in Er/Yb:LiNbO3 crystals tridoped with In3+ ions
001C47 (2012)		Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
002363 (2011)		Temperature-dependent light-output characteristics of GalnN light-emitting diodes with different dislocation densities
002550 (2011)		Single-molecule interfacial electron transfer dynamics manipulated by an external electric current
002567 (2011)		Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
002D76 (2011)		High Efficiency Yb:YAG Thin-Disk Laser at Room and Cryogenic Temperatures
003445 (2011)		An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes
003569 (2010)		Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation
003986 (2010)		Role of Interface Roughness on Lateral Transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency
004626 (2010)		Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
004D04 (2009)		Quantum-confinement effect on recombination dynamics and carrier localization in cubic InN and InxGa1-xN quantum boxes
005C11 (2008)		The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells
005F23 (2008)		Radiative and non-radiative relaxation of excitons in strain-compensated quantum dots
006073 (2008)		Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
006761 (2008)		Exciton radiative lifetime of quantum rods in reflectivity
007368 (2007)		Origin of localized excitons in in-containing three-dimensional bulk (Al, In, Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
008122 (2006)		Time evolution of the screening of piezoelectric fields in InGaN quantum wells
008520 (2006)		Quantum-structure dependent excitonic carrier dynamics of InxGa1-xN/GaN multi-quantum-wells
008916 (2006)		Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings

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