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Microwave absorption < Microwave amplifier < Microwave amplifiers  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 67.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000837 (2013) Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers
000F59 (2013) Demonstration of a Micro-Integrated Sub-Millimeter-Wave Pixel
003535 (2011) A 325 GHz InP HBT Differential-Mode Amplifier
004470 (2010) Development and characterization of a secondary RF plasma-assisted closed-field dual magnetron sputtering system for optical coatings on large-area substrates
005449 (2009) Fabrication of Titanium-Doped Indium Oxide Films for Dye-Sensitized Solar Cell Application Using Reactive RF Magnetron Sputter Method
006496 (2008) InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies : Doubling the bandwidth of phosphide heterojunction bipolar integrated circuits, used for imaging, radio astronomy and spectroscopy, appears to be feasible
009D26 (2005) G-Band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers
00B116 (2004) Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology
00B540 (2004) High performance millimeter wave 0.1 μm InP HEMT MMIC LNAs fabricated on 100 mm wafers
00BB69 (2004) An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth
00BC46 (2004) A 50-nm gate length InP pseudomorphic hemt implemented in an MMIC broadband feedback amplifier
00BC61 (2004) 4-12 GHz InP HEMT-based mmic low-noise amplifier
00BC92 (2004) 0.15 μm gate length MHEMT technology for 77GHz automotive radar applications
00D077 (2003) MMIC amplifier based receivers for earth remote sensing
00D428 (2003) HBT amplifier gains: From InGaP technology
00EE56 (2002) Multi-stage G-band (140-220 GHz) InP HBT amplifiers
00F939 (2002) An MMIC smart power amplifier of 21 % PAE at 16 dBm power level for W-CDMA mobile communication terminals
00FA11 (2002) A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
00FA13 (2002) A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier
00FA45 (2002) 40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors
011795 (2001) An indium Phosphide MMIC amplifier for 180-205 GHz

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