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List of bibliographic references

Number of relevant bibliographic references: 184.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000628 (2013) Quaternary Barrier InAlGaN HEMTs With fT/fmax of 230/300 GHz
000680 (2013) Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000706 (2013) Planar InGaAs p-i-n Photodiodes With Transparent-Conducting-Based Antireflection and Double-Path Reflector
000750 (2013) Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture
000B58 (2013) Impact of Different Barrier Layers and Indium Content of the Channel on the Analog Performance of InGaAs MOSFETs
000C54 (2013) Gigahertz Operation of a-IGZO Schottky Diodes
000F08 (2013) Effect of Interface States on the Performance of Antimonide nMOSFETs
001075 (2013) Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
001157 (2013) An efficient heat-spreader design: First demonstration on InGaP/graded InGaAs base/GaAs collector-up HBTs
001166 (2013) AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics
001232 (2013) 75 nm T-shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short-channel effect
001718 (2012) Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity : Heterostructure Microelectronics with TWHM 2011
001997 (2012) InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process
001998 (2012) InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption
001A03 (2012) InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
001A45 (2012) Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs
001C06 (2012) Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process : Heterostructure Microelectronics with TWHM 2011
001E36 (2012) Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs
002198 (2011) Type-II InAs/GaInSb superlattices for terahertz range photodetectors
002535 (2011) Spectral response tuning and realization of quasi-solar-blind detection in organic ultraviolet photodetectors
002B78 (2011) Indium-gallium-zinc-oxide based mechanically flexible transimpedance amplifier

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