Gallium Indium Phosphoarséniure < Gallium Indium Phosphoarséniure Mixte < Gallium Indium Phosphore Arséniure

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List of bibliographic references

Number of relevant bibliographic references: 1395.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000303 (2013)		Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000782 (2013)		Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature
003748 (2010)		Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well
003A90 (2010)		Polarization properties of InAs/InGaAsP/InP quantum dot stacks
003E21 (2010)		Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
004741 (2010)		Ab-initio investigation of structural, electronic and optical properties of InxGa1-xAs, GaAs1-yPy ternary and InxGa1-xAs1-yPy quaternary semiconductor alloys
005086 (2009)		Laser rapid thermal annealing of quantum semiconductor wafers : a one step bandgap engineering technique
005398 (2009)		Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering
01DF22 (1994)		Studies on temperature and concentration dependent minority carrier lifetime in heavily doped InGaAsP
01E365 (1994)		Microdisk lasers
01E383 (1994)		Metallization stress in weakly guiding InP/InGaAsP waveguides
01E409 (1994)		Mach-Zehnder interferometer polarization splitter in InGaAsP/InP
01E713 (1994)		Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy
01EE42 (1993)		Zero-bias modulation of tensile-strained InGaAs/InGaAsP quantum well lasers with wide phase margins
01EE73 (1993)		Wavelength dependence of T0 in InGaAsP semiconductor laser diodes
01EE93 (1993)		Very high temperature test of InP-based laser diodes
01EE96 (1993)		Vertical optical communication through stacked silicon wafers using hybrid monolithic thin film InGaAsP emitters and detectors
01EE97 (1993)		Vectorial simulation of passive TE/TM mode converter devices on InP
01EF17 (1993)		Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y in calculating minimum capacitance in C-V plot of MIS structure
01EF43 (1993)		Tunable two-segment DBR-laser with contacted surface grating for the 1.55 μm wavelength range
01EF45 (1993)		Tunable laser diodes utilizing transverse tuning scheme

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