7340J < 7340K < 7340L

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 835.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000F50 (2013)		Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode
002665 (2011)		Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures
004521 (2010)		Current transport through InP/InSb heterojunction: Effect of lattice mismatch
005A96 (2008)		Wavelength extended 2.4 μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations
005C98 (2008)		Surface passivation technology for III-V semiconductor nanoelectronics
006037 (2008)		Photocurrent amplification in a isotype N+-Gasb/n0-GalnAsSb type II heterojunctions
006253 (2008)		Modified LPE system used to diffuse Cd to obtain InSb infrared detectors
007627 (2007)		Low-cost 3D nanocomposite solar cells obtained by electrodeposition of CuInSe2
007835 (2007)		Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes
007F34 (2007)		AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
008657 (2006)		Passivation of InP-based HBTs
009B12 (2005)		Influence of high-index GaAs substrates on the 2D electron density of δ-doped phemt with an additional InxGa1-xAs (x > 0.15) thin layer embedded in the channel
009C48 (2005)		High-performance InP/lnGaAs pnp δ-doped heterojunction bipolar transistor
00A411 (2004-06-07)		Measurement of polarization charge and conduction-band offset at InxGa1-xN/GaN heterojunction interfaces
00A419 (2004-06-01)		Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors
00A493 (2004-05-03)		Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
00A517 (2004-05)		Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy
00A526 (2004-05)		Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry
00A550 (2004-05)		Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range
00A634 (2004-04)		Oxide-p-InSe Heterostructures with Improved Photoelectric Characteristics
00A661 (2004-04)		30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization

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