Yu. M. Sherniakov < Yu. M. Shernyakov < Yu. M. Smirnov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
006D29 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
006E84 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
007608 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
009649 (2005)		QD lasers : Physics and applications
009C46 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
00A437 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
00A530 (2004-05)		Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
00BD82 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
00BF40 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
00C434 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
00CC77 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers
00D080 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
00D277 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
00D406 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
00DD01 (2002-11-11)		Spectrotemporal response of 1.3 μm quantum-dot lasers
011261 (2001)		Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
011941 (2001)		1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
011971 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
011A11 (2000-12-01)		Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
012068 (2000-05)		Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
012074 (2000-05)		Power Conversion Efficiency of Quantum Dot Laser Diodes

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