Y. Arai < Y. Arakawa < Y. Araki

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 71.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000879 (2013)		Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emission
000C73 (2013)		Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition
002927 (2011)		New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range
003813 (2010)		Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method
003D46 (2010)		Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittings
004589 (2010)		Charged and neutral biexciton-exciton cascade in a single quantum dot within a photonic bandgap
007392 (2007)		Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy
007A65 (2007)		Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures
008217 (2006)		Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted In0.1Ga0.9As/GaAs channel with corrugated interfaces
008749 (2006)		Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence
008D08 (2006)		Electron transport and shell structures of single InAs quantum dots probed by nanogap electrodes
009110 (2006)		Advances in photonic crystals with MEMS and with semiconductor quantum dots
009282 (2005)		Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering
009501 (2005)		Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6 nm
009615 (2005)		Recent progress in self-assembled quantum-dot optical devices for optical telecommunication : temperature-insensitive 10 Gb s-1 directly modulated lasers and 40 Gb s-1 signal-regenerative amplifiers : Self-Organized Quantum Dots
009645 (2005)		Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
009B65 (2005)		InAs/AlAs quantum dots with InGaAs insertion layer: dependence of the indium composition and the thickness
00A708 (2004-03-15)		Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
00A778 (2004-02-16)		Picosecond dynamics of spin-related optical nonlinearities in InxGa1-xAs multiple quantum wells at 1064 nm
00AC61 (2004)		Spin and carrier relaxation in resonantly excited InGaAs MQWs
00AC93 (2004)		Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots

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