Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « Auteurs » - entrée « T. F. Kuech »
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T. F. Krauss < T. F. Kuech < T. F. Kuecha  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]
Ident.Authors (with country if any)Title
000911 (2013) Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy
000B00 (2013) InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions
001079 (2013) Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)
001382 (2012) The effect of helium ion implantation on the relaxation of strained InGaAs thin films
002947 (2011) Nanopatterned Quantum Dot Active Region Lasers on InP substrates
002E09 (2011) Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography
003095 (2011) Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1-y metamorphic buffer layers on InP substrates
003513 (2011) A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy
003F36 (2010) InAsyP1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers
004E24 (2009) Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures
005743 (2009) Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
006210 (2008) Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP
006637 (2008) Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates
006647 (2008) Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy
007548 (2007) Microcontact printing of indium metal using salt solution "ink"
007693 (2007) Interfacial chemistry of InP/GaAs bonded pairs
007E07 (2007) Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates
008185 (2006) The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAs
00C391 (2003-05-12) X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN
00E446 (2002-03-01) Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy
010302 (2001-04-09) Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding

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