R. D. Doherty < R. D. Dupuis < R. D. Engelken

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 54.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
001F69 (2012)		Carrier transport properties of Mg-doped InAlN films
002F48 (2011)		Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors
006B60 (2008)		Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers
007873 (2007)		High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition
007D60 (2007)		Comparison of GaN and In0.04Ga0.96N p-layers on the electrical and electroluminescence properties of green light emitting diodes
008836 (2006)		Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices
008840 (2006)		Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (001) GaAs substrates for mid-IR photodetector applications
00A809 (2004-02-02)		Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
00C052 (2003-08-18)		Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition
00C156 (2003-07-21)		Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition
00C266 (2003-06-16)		Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots
00D333 (2003)		Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition
00D435 (2003)		Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition
00DC10 (2002-12-09)		Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser
00DD09 (2002-11-04)		Electron transport through strongly coupled AlInP/GaInP superlattices
00E316 (2002-04-15)		Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1-x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition
00E433 (2002-03-11)		Current transport in InP/In0.5(Al0.6Ga0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy
00FC25 (2001-11-12)		Coupled InP quantum-dot InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure diode laser operation
00FD69 (2001-09-24)		Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructures
010036 (2001-06-25)		Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition
010125 (2001-05-28)		High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition

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