M. Julien < M. Jung < M. Jupina

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 46.
[0-20] [0 - 20][0 - 46][20-40]

Ident.	Authors (with country if any)	Title
001F36 (2012)		Circuit quantum electrodynamics with a spin qubit
004549 (2010)		Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixing
007A65 (2007)		Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures
008D08 (2006)		Electron transport and shell structures of single InAs quantum dots probed by nanogap electrodes
00E325 (2002-04-15)		Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures
00E338 (2002-04-15)		Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells
00EF08 (2002)		Microstructural, magnetotransport, and electronic subband studies of InAsxP1-x/InP modulation-doped strained single quantum wells
00F062 (2002)		Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells
010404 (2001-03-01)		Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer
010784 (2001)		The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
010E12 (2001)		Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures
012690 (2000)		The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells
013463 (2000)		Determination of the effective mass of the two-dimensional electron gas occupied at two subbands in In0.65Ga0.35As strained single quantum wells by using the fast Fourier transformation and the inverse fast Fourier transformation analyses
014880 (1999)		Structural, optical and electronic subband studies of lattice-matched In0.72Ga0.28As0.61P0.39/In multiple quantum wells
014E09 (1999)		Magnetotransport, excitonic transition and electronic subband studies in modulation-doped InxGa1-xAs/InyAl1-yAs step quantum wells
014E10 (1999)		Magnetotransport, excitonic transition and electronic structure studies of modulation-doped InxGa1-xAs/InyAl1-yAs asymmetric coupled double quantum wells
014E11 (1999)		Magnetotransport studies of the two-dimensional electron gas in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells
015066 (1999)		Hydrogenation and annealing effects on electronic subbands in modulation-doped Al0.25Ga0.75As/In0.18Ga0.82As/GaAs strained single quantum wells
015442 (1999)		Determination of the carrier density and the effective mass of the two-dimensional electron gas in asymmetric GaAs/In0.18Ga0.82As/Al0.25Ga0.75As modulation-doped strained single quantum wells
015D63 (1998-07-06)		Strain effects in lattice-mismatched InxGa1-xAs/InyAl1-yAs coupled double quantum wells
016619 (1998)		The dependence of the electron carrier occupation in the subband on the As mole fraction in modulation-doped InAsxP1-x/InP strained single quantum wells

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