I. M. Thomas < I. M. Tiginyanu < I. M. Tioginyanu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 46.
[0-20] [0 - 20][0 - 46][20-40]

Ident.	Authors (with country if any)	Title
001E85 (2012)		Crystal Chemistry of CdIn2S4, MgIn2S4, and MnIn2S4 Thiospinels under High Pressure
002657 (2011)		Quasi-Ordered Networks of Metal Nanotubes Embedded in Semiconductor Matrices for Photonic Applications
003C79 (2010)		Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte
004A09 (2009)		Terahertz conductivity of magnetoexcitons and electrons in semiconductor nanostructures
007061 (2007)		Structural and optical high-pressure study of spinel-type MnIn2S4
007A78 (2007)		Electron field emission from narrow band gap semiconductors (InAs)
009918 (2005)		Morphology and chemical composition microanalysis of 2D and 3D ordered structures on porous inp
009E40 (2005)		Enhanced nonlinear optical response of InP(100) membranes
00A190 (2005)		Cathodoluminescence microscopy and spectroscopy of porous n-InP
00BA65 (2004)		Cathodoluminescence microanalysis of porous GaP and InP structures
00C745 (2003-01-13)		Self-organized growth of single crystals of nanopores
00C833 (2003)		Voltage oscillations: an emergent property at high density pore growth
00CB94 (2003)		Single crystalline 2D porous arrays obtained by self organization in n-InP
00DB27 (2003)		A comparison of pores in silicon and pores in III-V compound materials
011277 (2001)		Fröhlich modes in porous III-V semiconductors
014698 (1999)		Tunnelling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures
018705 (1997)		Recombination in HgGaInS4 single crystals
019256 (1997)		Crystal order restoration and Zn-impurity activation in InP by As+-coimplantation and annealing
01A686 (1996)		Photoluminescence study of growth-related and processing-induced defects in indium phosphide
01A699 (1996)		Photoelectronic transitions in CuGa2.5In2.5S8
01C877 (1995)		Improvement of InP crystalline perfection by He+-implantation and subsequent annealing

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