H. Yamagishi < H. Yamaguchi < H. Yamaji

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List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
00AE23 (2004)		Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems
00B148 (2004)		Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers
00CD19 (2003)		Properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP
00D481 (2003)		Gap structure and anomalous superconducting state of quasi-2D heavy-fermion CeCoIn5
00EC02 (2002)		Probing the nodal structure in quasi-2D unconventional superconductors by thermal conductivity
00FC28 (2001-11-05)		Local Density of States in Zero-Dimensional Semiconductor Structures
00FF35 (2001-07-30)		Angular Position of Nodes in the Superconducting Gap of Quasi-2D Heavy-Fermion Superconductor CeCoIn5
010300 (2001-04-09)		Imaging of Friedel Oscillation Patterns of Two-Dimensionally Accumulated Electrons at Epitaxially Grown InAs(111)A Surfaces
012436 (2000-01-31)		Two-dimensional growth of InSb thin films on GaAs(111)A substrates
014849 (1999)		Superconductor-semiconductor-superconductor junctions using NbN
015189 (1999)		First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies
015191 (1999)		First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy
015C60 (1998-08-15)		Thickness-dependent electron accumulation in InAs thin films on GaAs(111)A: A scanning-tunneling-spectroscopy study
017E42 (1997-05)		Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
018154 (1997-01-15)		Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
018727 (1997)		RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A
018777 (1997)		Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy
019539 (1997)		A scanning tunneling microscopy-reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A- : Quantum dots and two-dimensional modes
019A05 (1996-08-05)		Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy
019F38 (1996-02-15)		Surface-defect formation on heavily doped InAs and GaAs layers studied by scanning tunneling microscopy
01B437 (1995-12-25)		Indium desorption from InAs surfaces and its dependence on As coverage

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