B. Taylor < B. Tell < B. Ter Penning

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]

Ident.	Authors (with country if any)	Title
01C565 (1995)		Monolithic semiconductor soliton transmitter
01F372 (1993)		Single-step bandgap control in InGaAs/InGaAlAs quantum well modulators via MeV implants
01FA31 (1993)		Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron-beam generated phase grating mask
020A62 (1993)		2 cm long monolithic multisection laser for active modelocking at 2.2 GHz
020F30 (1992)		Strained quantum wells for polarization-independent electrooptic waveguide switches
021145 (1992)		Quantum well interferometric modulator monolithically integrated with 1.55 μm tunable distributed Bragg reflector laser
021671 (1992)		Large blueshifting of InGaAs/InP quantum-well band gaps by ion implantation
021837 (1992)		InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation
021A40 (1992)		Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si-implanted InP substrates by molecular beam epitaxy
022686 (1991)		Strained multiquantum well double heterostructure optoelectronic switch and associated heterojunction fet
023008 (1991)		High quality GaInAs/AlGaInAs/AlInAs heterostructures on Si ion implanted semi-insulating InP substrates for novel high performance optical modulators
024194 (1990)		InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 μm
024689 (1990)		Compact low-voltage InGaAs/InAlAs multiple quantum well waveguide interferometers
024E03 (1989)		Phosphorus ion implantation induced intermixing on InGaAs-InP quantum well structures
025198 (1989)		Gate-length dependence of DC and microwave properties of submicrometer In0.53Ga0.47As HIGFET's
025529 (1989)		An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system
025B26 (1988)		Rapid thermal annealing of elevated-temperature silicon implants in InP
025D71 (1988)		Monolithically integrated receiver front end: In0.53Ga0.47As p-i-n amplifier
026039 (1988)		High-resistance regions produced in an In1-x-yGaxAlyAs system be He ion implantation
026074 (1988)		High contrast GaInAs:Fe photoconductive optical and gate for time-division demultiplexing
026314 (1988)		Disordering of InGaAs-InP quantum wells by Si implantation

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