B. A. Jovce < B. A. Joyce < B. A. Karlin

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]

Ident.	Authors (with country if any)	Title
00D303 (2003)		In situ studies of the MBE growth of III-V systems using RHEED and STM
010448 (2001-02-15)		Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy
011882 (2001)		A model for the appearance of chevrons on RHEED patterns from InAs quantum dots
014C77 (1999)		Nucleation and growth mechanisms during MBE of III-V compounds
014E92 (1999)		Islands and defects on the growing InAs(001)-(2 × 4) surface
015879 (1998-12-15)		Dislocation displacement field at the surface of InAs thin films grown on GaAs(110)
015884 (1998-12-15)		Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
015A73 (1998-10-15)		Scanning transmission-electron microscopy study of InAs/GaAs quantum dots
015C60 (1998-08-15)		Thickness-dependent electron accumulation in InAs thin films on GaAs(111)A: A scanning-tunneling-spectroscopy study
015D97 (1998-07)		Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
016569 (1998)		The substrate orientation dependence of In atom incorporation during the growth of (In, Ga)As on GaAs by molecular-beam epitaxy
016669 (1998)		Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
016B53 (1998)		Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films
017939 (1997-10-15)		Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy
017E42 (1997-05)		Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
018154 (1997-01-15)		Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
018404 (1997)		The growth of (InGa)As quantum wells on GaAs(111)A, (211)A and (311)A substrates
018488 (1997)		Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
018727 (1997)		RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A
018777 (1997)		Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy
018A81 (1997)		MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates

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