A. Sarua < A. Sasaki < A. Sasano

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]

Ident.	Authors (with country if any)	Title
00AE16 (2004)		Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well
00E648 (2002-01-01)		Effect of surfactant Sb on carrier lifetime in GaInP epilayers
00EA99 (2002)		Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer
010568 (2001-01-01)		Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order ≤0.55
012607 (2000)		Transition thickness of semiconductor heteroepitaxy
014913 (1999)		Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots : Special issue papers on quantum dots
016823 (1998)		Self-assembled InP islands grown on GaP substrate
017046 (1998)		Growth characteristics of GaInN on (0 0 0 1)sapphire by plasma-excited organometallic vapor phase epitaxy
017302 (1998)		Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
018122 (1997-02)		A stable scanning tunneling microscope designed for investigations of organic thin films in air
01A249 (1996)		Thermal stability of interfaces between metals and InP-based materials
01A849 (1996)		Near-infrared intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate
01AA91 (1996)		Initial growth layers and critical thickness of InAs heteroepitaxy on GaAs substrates
01B247 (1996)		Atomic scale study of InAs/GaAs heteroepitaxy
01B482 (1995-12-01)		Critical thickness of InAs grown on misoriented GaAs substrates
01C053 (1995)		Surface-emitting device with embedded circular grating coupler for possible application to optoelectronic integrated devices
01C056 (1995)		Surface related degradation of InP-based HEMTs during thermal stress
01C729 (1995)		Islands and critical thickness of InAs grown by MBE on nominally- and misoriented GaAs substrates
01C730 (1995)		Island formation of InAs grown on GaAs
01C817 (1995)		Increase of overlayer critical thickness by off-angled substrates
01CC67 (1995)		Effect of temperature on electrochemical reduction of high-pressure CO2 with In, Sn, and Pb electrodes

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