A. Larionov < A. Larsson < A. Lasbley

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 56.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
002D98 (2011)		Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE : Novel Gain Materials Based on III-V-N Compounds
005005 (2009)		Metamorphic InGaAs telecom lasers on GaAs
005195 (2009)		Independent determination of In and N concentrations in GaInNAs alloys
005367 (2009)		Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
005996 (2009)		A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
006A97 (2008)		Comparison of optical and structural quality of GaIn(N)As analog and digital quantum wells grown by molecular beam epitaxy
007555 (2007)		Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
007556 (2007)		Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm
009243 (2005)		Very low threshold current density 1.3 μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
009805 (2005)		Optimization of 1.3 μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
009A25 (2005)		Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
00A944 (2004)		Wavelength extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole 6-doping
00B374 (2004)		InP-Based Optically Pumped VECSEL Operating CW at 1550 nm
00B503 (2004)		High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader
00BC86 (2004)		1.3-1.55 μm light emission from InGaAs/GaAs quantum wells on GaAs using dipole δ-doping
00BC91 (2004)		0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm
00DA34 (2003)		Aluminium incorporation for growth optimization of 1.3 μm emission InAs/GaAs quantum dots by molecular beam epitaxy
00DE44 (2002-09-15)		Photoluminescence of an assembly of size-distributed self-assembled InAs quantum dots
00DF10 (2002-08-26)		Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
00E760 (2002)		Tunable external-cavity quantum-well laser using grating coupler integrated in selectively disordered waveguide
010625 (2001)		Waveguide input grating coupler for wavelength-division multiplexing and wavelength encoding

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