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Serveur d'exploration sur l'Indium - Repository (Accueil)

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List of bibliographic references

Number of relevant bibliographic references: 32.
Ident.Authors (with country if any)Title
002907 (2011) Novel Pt/Mg(In)(Al)O catalysts for ethane and propane dehydrogenation
00DD00 (2002-11-11) Ultrafast dynamics of interfacial electric fields in semiconductor heterostructures monitored by pump-probe second-harmonic generation
00DD62 (2002-10-15) Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix
00DD75 (2002-10-15) Fabrication and structural analysis of Al, Ga, and In nanocluster crystals
00E031 (2002-07-08) Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation
00E163 (2002-06-01) Determination of the order parameter of CuPt-B ordered GaInP2 films by x-ray diffraction
00E190 (2002-05-20) Mechanisms of oxygen incorporation in indium-tin-oxide films deposited by laser ablation at room temperature
00E234 (2002-05-01) The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition
00E637 (2002-01-07) Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP
010050 (2001-06-15) Soft-x-ray fluorescence spectra of III-V phosphides BP, GaP, and InP
010263 (2001-04-15) X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
010494 (2001-02-01) Phonon dispersion of indium along [111]
010C34 (2001) Oxidative dissolution of metacinnabar (β-HgS) by dissolved oxygen
011F90 (2000-05-25) A distribution of GT-strength and βp-emission near 100Sn
013B01 (1999-10-04) Localization of Na impurities at the buried CdS/Cu(In,Ga)Se2 heterojunction
013C77 (1999-08-15) Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors
013D62 (1999-07-15) Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation
014298 (1999-03) Erratum: Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy
015860 (1998-12-21) Beta-decay of 103In studied by using a total absorption spectrometer
015861 (1998-12-21) Beta strength distribution in neutron-deficient nuclei
015933 (1998-12) Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy
015998 (1998-11-02) Polytypoid structures in annealed In2O3-ZnO films
015D16 (1998-08) Electron capture decay of 116In and nuclear structure of double β decays
015E47 (1998-06-15) Tight-binding approach to excitons bound to monolayer impurity planes: Strong radiative properties of InAs in GaAs
016379 (1998-01-05) 6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers
018139 (1997-01-15) Measurement of the efficiency of a laser ion source with helium jet transport, laser ablation and RIS
019A70 (1996-07-15) Electrical properties of heteroepitaxial grown tin-doped indium oxide films
019D59 (1996-05) Electronic and vibrational spectra of InP quantum dots formed by sequential ion implantation
01BB50 (1995-04-01) Formation and optical characterization of nanometer dimension colloids in silica formed by sequentially implanting In and Ag
01BB85 (1995-03-15) Donor generation from native defects induced by In+ implantation into tin-doped indium oxide
01BC24 (1995-03) Specific absorbed fractions of energy from internal photon sources in brain tumor and cerebrospinal fluid
01D581 (1994-08-01) Electron microscopic and ion scattering studies of heteroepitaxial tin-doped indium oxide films

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