AffRegion.i
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Index « AffRegion.i » - entrée « Rhode Island »
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Québec < Rhode Island < Rhénanie-Palatinat  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]
Ident.Authors (with country if any)Title
00A427 (2004-06-01) Full-zone kp method of band structure calculation for wurtzite semiconductors
00A780 (2004-02-16) Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation
00A845 (2004-01-26) Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength
00DD64 (2002-10-15) Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays
00E280 (2002-05) Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy
00FB77 (2001-11-26) Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
00FD22 (2001-10-15) A dual-wavelength indium gallium nitride quantum well light emitting diode
010015 (2001-07) Metastability of InGaAs/GaAs probed by in situ optical stress sensor
011C35 (2000-09-18) Resonant-cavity InGaN quantum-well blue light-emitting diodes
011C56 (2000-09-15) Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15
012071 (2000-05) Real-time measurements of stress relaxation in InGaAs/GaAs
013A86 (1999-10-15) Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states
013F06 (1999-06-15) A study of low temperature crystallization of amorphous thin film indium-tin-oxide
013F13 (1999-06-14) A vertical injection blue light emitting diode in substrate separated InGaN heterostructures
013F22 (1999-06-07) A vertical cavity light emitting InGaN quantum well heterostructure
014355 (1999-02-08) Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy
015D24 (1998-07-27) Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
015F12 (1998-05-25) Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
015F96 (1998-05) Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy
016128 (1998-03-23) Gain characteristics of InGaN/GaN quantum well diode lasers
016201 (1998-03) Study on crystallinity of tin-doped indium oxide films deposited by dc magnetron sputtering

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